Novel resistive memory device using Cu/GeSe/W structure with low current operation

S. Z. Rahaman, Siddheswar Maikap, Hsien-Chin Chiu, C. H. Lin, Chao-Sung Lai, P. J. Tzeng, T. Y. Wu, T. C. Tien, M. J. Kao, M. J. Tsai

Research output: Contribution to conferenceProceeding

Original languageAmerican English
StatePublished - 2008
Event2008 International Electron Devices and Materials Symposia (IEDMS 2008) - Taichung,Taiwan
Duration: 28 11 200829 11 2008

Conference

Conference2008 International Electron Devices and Materials Symposia (IEDMS 2008)
Period28/11/0829/11/08

Cite this