Novel resistive memory device using Cu/GeSe/W structure with low current operation

S. Z. Rahaman; Siddheswar Maikap; Hsien-Chin Chiu; C. H. Lin; Chao-Sung Lai; P. J. Tzeng; T. Y. Wu; T. C. Tien; M. J. Kao; M. J. Tsai

Novel resistive memory device using Cu/GeSe/W structure with low current operation

S. Z. Rahaman, Siddheswar Maikap, Hsien-Chin Chiu, C. H. Lin, Chao-Sung Lai, P. J. Tzeng, T. Y. Wu, T. C. Tien, M. J. Kao, M. J. Tsai

Department of Electronic Engineering

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2008
Event	2008 International Electron Devices and Materials Symposia (IEDMS 2008) - Taichung,Taiwan Duration: 28 11 2008 → 29 11 2008

Conference

Conference	2008 International Electron Devices and Materials Symposia (IEDMS 2008)
Period	28/11/08 → 29/11/08

Cite this

@conference{69b18b8a874846e1a5e680978c014b42,

title = "Novel resistive memory device using Cu/GeSe/W structure with low current operation",

author = "Rahaman, \{S. Z.\} and Siddheswar Maikap and Hsien-Chin Chiu and Lin, \{C. H.\} and Chao-Sung Lai and Tzeng, \{P. J.\} and Wu, \{T. Y.\} and Tien, \{T. C.\} and Kao, \{M. J.\} and Tsai, \{M. J.\}",

year = "2008",

language = "American English",

note = "2008 International Electron Devices and Materials Symposia (IEDMS 2008) ; Conference date: 28-11-2008 Through 29-11-2008",

}

TY - CONF

T1 - Novel resistive memory device using Cu/GeSe/W structure with low current operation

AU - Rahaman, S. Z.

AU - Maikap, Siddheswar

AU - Chiu, Hsien-Chin

AU - Lin, C. H.

AU - Lai, Chao-Sung

AU - Tzeng, P. J.

AU - Wu, T. Y.

AU - Tien, T. C.

AU - Kao, M. J.

AU - Tsai, M. J.

PY - 2008

Y1 - 2008

M3 - Proceeding

T2 - 2008 International Electron Devices and Materials Symposia (IEDMS 2008)

Y2 - 28 November 2008 through 29 November 2008

ER -