Novel sidewall strained-Si channel nMOSFET

K. C. Liu; X. Wang; E. Quinones; X. Chen; X. D. Chen; D. Kencke; B. Anantharam; R. D. Chang; S. K. Ray; S. K. Oswal; C. Y. Tu; S. K. Banerjee

Novel sidewall strained-Si channel nMOSFET

K. C. Liu^*, X. Wang, E. Quinones, X. Chen, X. D. Chen, D. Kencke, B. Anantharam, R. D. Chang, S. K. Ray, S. K. Oswal, C. Y. Tu, S. K. Banerjee

^*Corresponding author for this work

University of Texas at Austin

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

We fabricated a novel vertical sidewall strained-Si device without relaxed SiGe buffer layers in this work. The electrical performance has been characterized using C-V and I-V measurement. TEM pictures show a high quality crystalline tensile-strained-Si layer grown on the sidewall of a compressively-strained SiGe layer. The transconductance measurements of sidewall-tensil-strained Si n-MOSFETs exhibit the role of enhanced electron mobility as tensil strain increases. In addition to device results, the theoretical sidewall conduction and valence band offset calculations, relative to strained SiGe layer, will also be presented in this paper.

Original language	English
Pages (from-to)	63-66
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - 1999
Externally published	Yes
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 05 12 1999 → 08 12 1999

Cite this

@article{89735cd923c443a6a93be41b73666cca,

title = "Novel sidewall strained-Si channel nMOSFET",

abstract = "We fabricated a novel vertical sidewall strained-Si device without relaxed SiGe buffer layers in this work. The electrical performance has been characterized using C-V and I-V measurement. TEM pictures show a high quality crystalline tensile-strained-Si layer grown on the sidewall of a compressively-strained SiGe layer. The transconductance measurements of sidewall-tensil-strained Si n-MOSFETs exhibit the role of enhanced electron mobility as tensil strain increases. In addition to device results, the theoretical sidewall conduction and valence band offset calculations, relative to strained SiGe layer, will also be presented in this paper.",

author = "Liu, {K. C.} and X. Wang and E. Quinones and X. Chen and Chen, {X. D.} and D. Kencke and B. Anantharam and Chang, {R. D.} and Ray, {S. K.} and Oswal, {S. K.} and Tu, {C. Y.} and Banerjee, {S. K.}",

year = "1999",

language = "英语",

pages = "63--66",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

}

TY - JOUR

T1 - Novel sidewall strained-Si channel nMOSFET

AU - Liu, K. C.

AU - Wang, X.

AU - Quinones, E.

AU - Chen, X.

AU - Chen, X. D.

AU - Kencke, D.

AU - Anantharam, B.

AU - Chang, R. D.

AU - Ray, S. K.

AU - Oswal, S. K.

AU - Tu, C. Y.

AU - Banerjee, S. K.

PY - 1999

Y1 - 1999

N2 - We fabricated a novel vertical sidewall strained-Si device without relaxed SiGe buffer layers in this work. The electrical performance has been characterized using C-V and I-V measurement. TEM pictures show a high quality crystalline tensile-strained-Si layer grown on the sidewall of a compressively-strained SiGe layer. The transconductance measurements of sidewall-tensil-strained Si n-MOSFETs exhibit the role of enhanced electron mobility as tensil strain increases. In addition to device results, the theoretical sidewall conduction and valence band offset calculations, relative to strained SiGe layer, will also be presented in this paper.

AB - We fabricated a novel vertical sidewall strained-Si device without relaxed SiGe buffer layers in this work. The electrical performance has been characterized using C-V and I-V measurement. TEM pictures show a high quality crystalline tensile-strained-Si layer grown on the sidewall of a compressively-strained SiGe layer. The transconductance measurements of sidewall-tensil-strained Si n-MOSFETs exhibit the role of enhanced electron mobility as tensil strain increases. In addition to device results, the theoretical sidewall conduction and valence band offset calculations, relative to strained SiGe layer, will also be presented in this paper.

UR - http://www.scopus.com/inward/record.url?scp=0033347820&partnerID=8YFLogxK

M3 - 会议文章

AN - SCOPUS:0033347820

SN - 0163-1918

SP - 63

EP - 66

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Novel sidewall strained-Si channel nMOSFET

Abstract

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