Novel test structure for evaluating dynamic dopant activation after ion implantation

Jung Ruey Tsai; Ruey Dar Chang; Cheng Hui Chou; Hsueh Chun Liao; Sz Kai Huang; Sung Hung Lin; Jui Chang Lin

doi:10.1109/ICMTS.2016.7476200

Novel test structure for evaluating dynamic dopant activation after ion implantation

Jung Ruey Tsai, Ruey Dar Chang, Cheng Hui Chou, Hsueh Chun Liao, Sz Kai Huang, Sung Hung Lin, Jui Chang Lin

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This work focuses on the development of a novel test structure to evaluate the dynamic behavior of electrical characteristics in the boron-implanted germanium samples during the solid phase epitaxial regrowth (SPER) at low temperature annealing of 360 and 400 °C with various annealing times ranging from 30 to 300 min. In the early stage of SPER annealing, the sheet carrier concentration is increased with annealing time. And then, it will saturate to a level after about 2 hr annealing which implies the completion of SPER process.

Original language	English
Title of host publication	2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	168-171
Number of pages	4
ISBN (Electronic)	9781467387934
DOIs	https://doi.org/10.1109/ICMTS.2016.7476200
State	Published - 20 05 2016
Event	29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Yokohama, Japan Duration: 28 03 2016 → 31 03 2016

Publication series

Name	IEEE International Conference on Microelectronic Test Structures
Volume	2016-May

Conference

Conference	29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016
Country/Territory	Japan
City	Yokohama
Period	28/03/16 → 31/03/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

Hall measurement
SPER
dopant activation
germanium

Access to Document

10.1109/ICMTS.2016.7476200

Cite this

Tsai, J. R., Chang, R. D., Chou, C. H., Liao, H. C., Huang, S. K., Lin, S. H., & Lin, J. C. (2016). Novel test structure for evaluating dynamic dopant activation after ion implantation. In 2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings (pp. 168-171). Article 7476200 (IEEE International Conference on Microelectronic Test Structures; Vol. 2016-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMTS.2016.7476200

Tsai, Jung Ruey ; Chang, Ruey Dar ; Chou, Cheng Hui et al. / Novel test structure for evaluating dynamic dopant activation after ion implantation. 2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 168-171 (IEEE International Conference on Microelectronic Test Structures).

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abstract = "This work focuses on the development of a novel test structure to evaluate the dynamic behavior of electrical characteristics in the boron-implanted germanium samples during the solid phase epitaxial regrowth (SPER) at low temperature annealing of 360 and 400 °C with various annealing times ranging from 30 to 300 min. In the early stage of SPER annealing, the sheet carrier concentration is increased with annealing time. And then, it will saturate to a level after about 2 hr annealing which implies the completion of SPER process.",

keywords = "Hall measurement, SPER, dopant activation, germanium",

author = "Tsai, \{Jung Ruey\} and Chang, \{Ruey Dar\} and Chou, \{Cheng Hui\} and Liao, \{Hsueh Chun\} and Huang, \{Sz Kai\} and Lin, \{Sung Hung\} and Lin, \{Jui Chang\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 ; Conference date: 28-03-2016 Through 31-03-2016",

year = "2016",

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doi = "10.1109/ICMTS.2016.7476200",

language = "英语",

series = "IEEE International Conference on Microelectronic Test Structures",

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Tsai, JR, Chang, RD, Chou, CH, Liao, HC, Huang, SK, Lin, SH & Lin, JC 2016, Novel test structure for evaluating dynamic dopant activation after ion implantation. in 2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings., 7476200, IEEE International Conference on Microelectronic Test Structures, vol. 2016-May, Institute of Electrical and Electronics Engineers Inc., pp. 168-171, 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016, Yokohama, Japan, 28/03/16. https://doi.org/10.1109/ICMTS.2016.7476200

Novel test structure for evaluating dynamic dopant activation after ion implantation. / Tsai, Jung Ruey; Chang, Ruey Dar; Chou, Cheng Hui et al.
2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. p. 168-171 7476200 (IEEE International Conference on Microelectronic Test Structures; Vol. 2016-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - This work focuses on the development of a novel test structure to evaluate the dynamic behavior of electrical characteristics in the boron-implanted germanium samples during the solid phase epitaxial regrowth (SPER) at low temperature annealing of 360 and 400 °C with various annealing times ranging from 30 to 300 min. In the early stage of SPER annealing, the sheet carrier concentration is increased with annealing time. And then, it will saturate to a level after about 2 hr annealing which implies the completion of SPER process.

AB - This work focuses on the development of a novel test structure to evaluate the dynamic behavior of electrical characteristics in the boron-implanted germanium samples during the solid phase epitaxial regrowth (SPER) at low temperature annealing of 360 and 400 °C with various annealing times ranging from 30 to 300 min. In the early stage of SPER annealing, the sheet carrier concentration is increased with annealing time. And then, it will saturate to a level after about 2 hr annealing which implies the completion of SPER process.

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Tsai JR, Chang RD, Chou CH, Liao HC, Huang SK, Lin SH et al. Novel test structure for evaluating dynamic dopant activation after ion implantation. In 2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc. 2016. p. 168-171. 7476200. (IEEE International Conference on Microelectronic Test Structures). doi: 10.1109/ICMTS.2016.7476200

Novel test structure for evaluating dynamic dopant activation after ion implantation

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