Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention

Steve S. Chung; Y. H. Tseng; C. S. Lai; Y. Hsu; Eric Ho; Terry Chen; L. C. Peng; C. H. Chu

doi:10.1109/IEDM.2007.4418972

Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention

Steve S. Chung, Y. H. Tseng, C. S. Lai, Y. Hsu, Eric Ho, Terry Chen, L. C. Peng, C. H. Chu

Department of Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

17 Scopus citations

Abstract

A novel cell operation scheme featuring low voltage, high speed, and excellent data retention has been proposed for SONOS flash memory. First, in 1bit/cell operation, program is achieved by a back-bias assisted hot hole injection, while erase is achieved by forward-bias assisted electron injection. For a thick tunnel oxide (50A°), the ultra-low voltage (∼5V) and ultra-fast speed (<1μsec) operation has been the record reported to date. On the other hand, a 2 bit/cell operation is also demonstrated, in which very good retention can be achieved in comparison to conventional operation schemes, e.g., CUE (channel hot electron) or BTB(Band-to-band) tunneling etc.

Original language	English
Article number	4418972
Pages (from-to)	457-460
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4418972
State	Published - 2007
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 10 12 2007 → 12 12 2007

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title = "Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention",

abstract = "A novel cell operation scheme featuring low voltage, high speed, and excellent data retention has been proposed for SONOS flash memory. First, in 1bit/cell operation, program is achieved by a back-bias assisted hot hole injection, while erase is achieved by forward-bias assisted electron injection. For a thick tunnel oxide (50A°), the ultra-low voltage (∼5V) and ultra-fast speed (<1μsec) operation has been the record reported to date. On the other hand, a 2 bit/cell operation is also demonstrated, in which very good retention can be achieved in comparison to conventional operation schemes, e.g., CUE (channel hot electron) or BTB(Band-to-band) tunneling etc.",

author = "Chung, {Steve S.} and Tseng, {Y. H.} and Lai, {C. S.} and Y. Hsu and Eric Ho and Terry Chen and Peng, {L. C.} and Chu, {C. H.}",

year = "2007",

doi = "10.1109/IEDM.2007.4418972",

language = "英语",

pages = "457--460",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

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note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

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T1 - Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention

AU - Chung, Steve S.

AU - Tseng, Y. H.

AU - Lai, C. S.

AU - Hsu, Y.

AU - Ho, Eric

AU - Chen, Terry

AU - Peng, L. C.

AU - Chu, C. H.

PY - 2007

Y1 - 2007

N2 - A novel cell operation scheme featuring low voltage, high speed, and excellent data retention has been proposed for SONOS flash memory. First, in 1bit/cell operation, program is achieved by a back-bias assisted hot hole injection, while erase is achieved by forward-bias assisted electron injection. For a thick tunnel oxide (50A°), the ultra-low voltage (∼5V) and ultra-fast speed (<1μsec) operation has been the record reported to date. On the other hand, a 2 bit/cell operation is also demonstrated, in which very good retention can be achieved in comparison to conventional operation schemes, e.g., CUE (channel hot electron) or BTB(Band-to-band) tunneling etc.

AB - A novel cell operation scheme featuring low voltage, high speed, and excellent data retention has been proposed for SONOS flash memory. First, in 1bit/cell operation, program is achieved by a back-bias assisted hot hole injection, while erase is achieved by forward-bias assisted electron injection. For a thick tunnel oxide (50A°), the ultra-low voltage (∼5V) and ultra-fast speed (<1μsec) operation has been the record reported to date. On the other hand, a 2 bit/cell operation is also demonstrated, in which very good retention can be achieved in comparison to conventional operation schemes, e.g., CUE (channel hot electron) or BTB(Band-to-band) tunneling etc.

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U2 - 10.1109/IEDM.2007.4418972

DO - 10.1109/IEDM.2007.4418972

M3 - 会议文章

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JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

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T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention

Abstract

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