Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention

Steve S. Chung; Y. H. Tseng; C. S. Lai; Y. Hsu; Eric Ho; Terry Chen; L. C. Peng; C. H. Chu

doi:10.1109/IEDM.2007.4418972

Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention

Steve S. Chung
, Y. H. Tseng
, C. S. Lai
, Y. Hsu
, Eric Ho
, Terry Chen
, L. C. Peng
, C. H. Chu

Department of Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

18 Scopus citations

Abstract

A novel cell operation scheme featuring low voltage, high speed, and excellent data retention has been proposed for SONOS flash memory. First, in 1bit/cell operation, program is achieved by a back-bias assisted hot hole injection, while erase is achieved by forward-bias assisted electron injection. For a thick tunnel oxide (50A°), the ultra-low voltage (∼5V) and ultra-fast speed (<1μsec) operation has been the record reported to date. On the other hand, a 2 bit/cell operation is also demonstrated, in which very good retention can be achieved in comparison to conventional operation schemes, e.g., CUE (channel hot electron) or BTB(Band-to-band) tunneling etc.

Original language	English
Article number	4418972
Pages (from-to)	457-460
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4418972
State	Published - 2007
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 10 12 2007 → 12 12 2007

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10.1109/IEDM.2007.4418972

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title = "Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention",

abstract = "A novel cell operation scheme featuring low voltage, high speed, and excellent data retention has been proposed for SONOS flash memory. First, in 1bit/cell operation, program is achieved by a back-bias assisted hot hole injection, while erase is achieved by forward-bias assisted electron injection. For a thick tunnel oxide (50A°), the ultra-low voltage (∼5V) and ultra-fast speed (<1μsec) operation has been the record reported to date. On the other hand, a 2 bit/cell operation is also demonstrated, in which very good retention can be achieved in comparison to conventional operation schemes, e.g., CUE (channel hot electron) or BTB(Band-to-band) tunneling etc.",

author = "Chung, \{Steve S.\} and Tseng, \{Y. H.\} and Lai, \{C. S.\} and Y. Hsu and Eric Ho and Terry Chen and Peng, \{L. C.\} and Chu, \{C. H.\}",

year = "2007",

doi = "10.1109/IEDM.2007.4418972",

language = "英语",

pages = "457--460",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

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TY - JOUR

T1 - Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention

AU - Chung, Steve S.

AU - Tseng, Y. H.

AU - Lai, C. S.

AU - Hsu, Y.

AU - Ho, Eric

AU - Chen, Terry

AU - Peng, L. C.

AU - Chu, C. H.

PY - 2007

Y1 - 2007

N2 - A novel cell operation scheme featuring low voltage, high speed, and excellent data retention has been proposed for SONOS flash memory. First, in 1bit/cell operation, program is achieved by a back-bias assisted hot hole injection, while erase is achieved by forward-bias assisted electron injection. For a thick tunnel oxide (50A°), the ultra-low voltage (∼5V) and ultra-fast speed (<1μsec) operation has been the record reported to date. On the other hand, a 2 bit/cell operation is also demonstrated, in which very good retention can be achieved in comparison to conventional operation schemes, e.g., CUE (channel hot electron) or BTB(Band-to-band) tunneling etc.

AB - A novel cell operation scheme featuring low voltage, high speed, and excellent data retention has been proposed for SONOS flash memory. First, in 1bit/cell operation, program is achieved by a back-bias assisted hot hole injection, while erase is achieved by forward-bias assisted electron injection. For a thick tunnel oxide (50A°), the ultra-low voltage (∼5V) and ultra-fast speed (<1μsec) operation has been the record reported to date. On the other hand, a 2 bit/cell operation is also demonstrated, in which very good retention can be achieved in comparison to conventional operation schemes, e.g., CUE (channel hot electron) or BTB(Band-to-band) tunneling etc.

UR - https://www.scopus.com/pages/publications/50249132579

U2 - 10.1109/IEDM.2007.4418972

DO - 10.1109/IEDM.2007.4418972

M3 - 会议文章

AN - SCOPUS:50249132579

SN - 0163-1918

SP - 457

EP - 460

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

M1 - 4418972

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention

Abstract

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