Observation of carrier depletion and emission effects on capacitance dispersion in relaxed in0.2Ga0.8As/GaAs quantum wells

J. F. Chen; P. Y. Wang; C. Y. Tsai; J. S. Wang; N. C. Chen

doi:10.1063/1.125048

Observation of carrier depletion and emission effects on capacitance dispersion in relaxed in_0.2Ga_0.8As/GaAs quantum wells

J. F. Chen^*, P. Y. Wang, C. Y. Tsai, J. S. Wang, N. C. Chen

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

5 Scopus citations

Abstract

Strong changes in capacitance over frequency are found for highly relaxed In_0.2Ga_0.8As/GaAs quantum well. The high-frequency dispersion is explained by a resistance-capacitance time constant effect due to the existence of a high resistive layer while the low-frequency dispersion is due to carrier emission from traps. The high-resistance layer is created by carrier depletion when InGaAs thickness increases beyond the critical thickness. Excellent agreement is found between the data from capacitance-frequency spectra and deep-level transient spectroscopy, permitting us to conclude that both the carrier depletion and emission effects observed in capacitance-frequency spectra are due to the existence of an acceptor trap at 0.33 eV. This trap is generated when the InGaAs thickness is beyond its critical thickness and is due to defect states associated with misfit dislocations.

Original language	English
Pages (from-to)	2461-2463
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	16
DOIs	https://doi.org/10.1063/1.125048
State	Published - 18 10 1999
Externally published	Yes

Access to Document

10.1063/1.125048

Cite this

@article{8f081110f7654fd2bd7e897a3e13623a,

title = "Observation of carrier depletion and emission effects on capacitance dispersion in relaxed in0.2Ga0.8As/GaAs quantum wells",

abstract = "Strong changes in capacitance over frequency are found for highly relaxed In0.2Ga0.8As/GaAs quantum well. The high-frequency dispersion is explained by a resistance-capacitance time constant effect due to the existence of a high resistive layer while the low-frequency dispersion is due to carrier emission from traps. The high-resistance layer is created by carrier depletion when InGaAs thickness increases beyond the critical thickness. Excellent agreement is found between the data from capacitance-frequency spectra and deep-level transient spectroscopy, permitting us to conclude that both the carrier depletion and emission effects observed in capacitance-frequency spectra are due to the existence of an acceptor trap at 0.33 eV. This trap is generated when the InGaAs thickness is beyond its critical thickness and is due to defect states associated with misfit dislocations.",

author = "Chen, {J. F.} and Wang, {P. Y.} and Tsai, {C. Y.} and Wang, {J. S.} and Chen, {N. C.}",

year = "1999",

month = oct,

day = "18",

doi = "10.1063/1.125048",

language = "英语",

volume = "75",

pages = "2461--2463",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Observation of carrier depletion and emission effects on capacitance dispersion in relaxed in0.2Ga0.8As/GaAs quantum wells

AU - Chen, J. F.

AU - Wang, P. Y.

AU - Tsai, C. Y.

AU - Wang, J. S.

AU - Chen, N. C.

PY - 1999/10/18

Y1 - 1999/10/18

N2 - Strong changes in capacitance over frequency are found for highly relaxed In0.2Ga0.8As/GaAs quantum well. The high-frequency dispersion is explained by a resistance-capacitance time constant effect due to the existence of a high resistive layer while the low-frequency dispersion is due to carrier emission from traps. The high-resistance layer is created by carrier depletion when InGaAs thickness increases beyond the critical thickness. Excellent agreement is found between the data from capacitance-frequency spectra and deep-level transient spectroscopy, permitting us to conclude that both the carrier depletion and emission effects observed in capacitance-frequency spectra are due to the existence of an acceptor trap at 0.33 eV. This trap is generated when the InGaAs thickness is beyond its critical thickness and is due to defect states associated with misfit dislocations.

AB - Strong changes in capacitance over frequency are found for highly relaxed In0.2Ga0.8As/GaAs quantum well. The high-frequency dispersion is explained by a resistance-capacitance time constant effect due to the existence of a high resistive layer while the low-frequency dispersion is due to carrier emission from traps. The high-resistance layer is created by carrier depletion when InGaAs thickness increases beyond the critical thickness. Excellent agreement is found between the data from capacitance-frequency spectra and deep-level transient spectroscopy, permitting us to conclude that both the carrier depletion and emission effects observed in capacitance-frequency spectra are due to the existence of an acceptor trap at 0.33 eV. This trap is generated when the InGaAs thickness is beyond its critical thickness and is due to defect states associated with misfit dislocations.

UR - http://www.scopus.com/inward/record.url?scp=0038668231&partnerID=8YFLogxK

U2 - 10.1063/1.125048

DO - 10.1063/1.125048

M3 - 文章

AN - SCOPUS:0038668231

SN - 0003-6951

VL - 75

SP - 2461

EP - 2463

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Observation of carrier depletion and emission effects on capacitance dispersion in relaxed in_0.2Ga_0.8As/GaAs quantum wells

Abstract

Access to Document

Other files and links

Fingerprint

Cite this