Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x/TiO x/TiN Structure

Debanjan Jana, Subhranu Samanta, Sourav Roy, Yu Feng Lin, Siddheswar Maikap*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

25 Scopus citations


The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrOx/TiOx/TiN structure for the first time. Transmission electron microscope image confirmed a via-hole size of 0.4 µm. A 3-nm-thick amorphous TiOx with 4-nm-thick polycrystalline CrOx layer was observed. A small 0.4-µm device shows reversible resistive switching at a current compliance of 300 µA as compared to other larger size devices (1–8 µm) owing to reduction of leakage current through the TiOx layer. Good device-to-device uniformity with a yield of >85 % has been clarified by weibull distribution owing to higher slope/shape factor. The switching mechanism is based on oxygen vacancy migration from the CrOx layer and filament formation/rupture in the TiOx layer. Long read pulse endurance of >105 cycles, good data retention of 6 h, and a program/erase speed of 1 µs pulse width have been obtained.

Original languageEnglish
Pages (from-to)392-399
Number of pages8
JournalNano-Micro Letters
Issue number4
StatePublished - 01 10 2015

Bibliographical note

Publisher Copyright:
© 2015, The Author(s).


  • CrO
  • Device size
  • Resistive switching memory
  • Slope/shape factor
  • TiO


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