Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x/TiO x/TiN Structure

Debanjan Jana; Subhranu Samanta; Sourav Roy; Yu Feng Lin; Siddheswar Maikap

doi:10.1007/s40820-015-0055-3

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO_x/TiO_x/TiN Structure

Debanjan Jana, Subhranu Samanta, Sourav Roy, Yu Feng Lin, Siddheswar Maikap^*

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

27 Scopus citations

Abstract

The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrO_x/TiO_x/TiN structure for the first time. Transmission electron microscope image confirmed a via-hole size of 0.4 µm. A 3-nm-thick amorphous TiO_x with 4-nm-thick polycrystalline CrO_x layer was observed. A small 0.4-µm device shows reversible resistive switching at a current compliance of 300 µA as compared to other larger size devices (1–8 µm) owing to reduction of leakage current through the TiO_x layer. Good device-to-device uniformity with a yield of >85 % has been clarified by weibull distribution owing to higher slope/shape factor. The switching mechanism is based on oxygen vacancy migration from the CrO_x layer and filament formation/rupture in the TiO_x layer. Long read pulse endurance of >10⁵ cycles, good data retention of 6 h, and a program/erase speed of 1 µs pulse width have been obtained.

Original language	English
Pages (from-to)	392-399
Number of pages	8
Journal	Nano-Micro Letters
Volume	7
Issue number	4
DOIs	https://doi.org/10.1007/s40820-015-0055-3
State	Published - 01 10 2015

Bibliographical note

Publisher Copyright:
© 2015, The Author(s).

Keywords

CrO
Device size
Resistive switching memory
Slope/shape factor
TiO

Access to Document

10.1007/s40820-015-0055-3

Cite this

@article{5e982445acbf43a38bae129c8b4ce4c0,

title = "Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x/TiO x/TiN Structure",

abstract = "The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrOx/TiOx/TiN structure for the first time. Transmission electron microscope image confirmed a via-hole size of 0.4 µm. A 3-nm-thick amorphous TiOx with 4-nm-thick polycrystalline CrOx layer was observed. A small 0.4-µm device shows reversible resistive switching at a current compliance of 300 µA as compared to other larger size devices (1–8 µm) owing to reduction of leakage current through the TiOx layer. Good device-to-device uniformity with a yield of >85 % has been clarified by weibull distribution owing to higher slope/shape factor. The switching mechanism is based on oxygen vacancy migration from the CrOx layer and filament formation/rupture in the TiOx layer. Long read pulse endurance of >105 cycles, good data retention of 6 h, and a program/erase speed of 1 µs pulse width have been obtained.",

keywords = "CrO, Device size, Resistive switching memory, Slope/shape factor, TiO",

author = "Debanjan Jana and Subhranu Samanta and Sourav Roy and Lin, {Yu Feng} and Siddheswar Maikap",

note = "Publisher Copyright: {\textcopyright} 2015, The Author(s).",

year = "2015",

month = oct,

day = "1",

doi = "10.1007/s40820-015-0055-3",

language = "英语",

volume = "7",

pages = "392--399",

journal = "Nano-Micro Letters",

issn = "2311-6706",

publisher = "Open Access Science Online",

number = "4",

}

TY - JOUR

T1 - Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x/TiO x/TiN Structure

AU - Jana, Debanjan

AU - Samanta, Subhranu

AU - Roy, Sourav

AU - Lin, Yu Feng

AU - Maikap, Siddheswar

PY - 2015/10/1

Y1 - 2015/10/1

N2 - The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrOx/TiOx/TiN structure for the first time. Transmission electron microscope image confirmed a via-hole size of 0.4 µm. A 3-nm-thick amorphous TiOx with 4-nm-thick polycrystalline CrOx layer was observed. A small 0.4-µm device shows reversible resistive switching at a current compliance of 300 µA as compared to other larger size devices (1–8 µm) owing to reduction of leakage current through the TiOx layer. Good device-to-device uniformity with a yield of >85 % has been clarified by weibull distribution owing to higher slope/shape factor. The switching mechanism is based on oxygen vacancy migration from the CrOx layer and filament formation/rupture in the TiOx layer. Long read pulse endurance of >105 cycles, good data retention of 6 h, and a program/erase speed of 1 µs pulse width have been obtained.

AB - The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrOx/TiOx/TiN structure for the first time. Transmission electron microscope image confirmed a via-hole size of 0.4 µm. A 3-nm-thick amorphous TiOx with 4-nm-thick polycrystalline CrOx layer was observed. A small 0.4-µm device shows reversible resistive switching at a current compliance of 300 µA as compared to other larger size devices (1–8 µm) owing to reduction of leakage current through the TiOx layer. Good device-to-device uniformity with a yield of >85 % has been clarified by weibull distribution owing to higher slope/shape factor. The switching mechanism is based on oxygen vacancy migration from the CrOx layer and filament formation/rupture in the TiOx layer. Long read pulse endurance of >105 cycles, good data retention of 6 h, and a program/erase speed of 1 µs pulse width have been obtained.

KW - CrO

KW - Device size

KW - Resistive switching memory

KW - Slope/shape factor

KW - TiO

UR - http://www.scopus.com/inward/record.url?scp=84958780375&partnerID=8YFLogxK

U2 - 10.1007/s40820-015-0055-3

DO - 10.1007/s40820-015-0055-3

M3 - 文章

AN - SCOPUS:84958780375

SN - 2311-6706

VL - 7

SP - 392

EP - 399

JO - Nano-Micro Letters

JF - Nano-Micro Letters

IS - 4

ER -