Observations of electrical and luminescence anomalies in InGaN/GaN blue light-emitting diodes

Tzer En Nee; Jen Cheng Wang; Hui Tang Shen; Chung Han Lin; Ya Fen Wu

doi:10.1116/1.2207152

Observations of electrical and luminescence anomalies in InGaN/GaN blue light-emitting diodes

Tzer En Nee^*, Jen Cheng Wang, Hui Tang Shen, Chung Han Lin, Ya Fen Wu

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

Unique correlations between the electrical and optical characteristics of InGaN (In) GaN multiple quantum-well light-emitting diodes (LEDs) were investigated over a broad range of temperatures. The dependence of nonunity ideality factors extracted from the current-voltage analysis on temperature determines the carrier-transport mechanisms in the heterodevices. The pseudotemperatures To for the LEDs with multiquantum barriers and with GaN barriers were found to be 945 and 1385 K, respectively, at temperatures of 180-300 K while having values of 1195 and 2720 K below about 180 K. Correspondingly, the temperature-dependent electroluminescence observations suggest that the To anomaly caused the spectral intensity to deteriorate.

Original language	English
Article number	114604JVA
Pages (from-to)	1016-1019
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	24
Issue number	4
DOIs	https://doi.org/10.1116/1.2207152
State	Published - 07 2006

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title = "Observations of electrical and luminescence anomalies in InGaN/GaN blue light-emitting diodes",

abstract = "Unique correlations between the electrical and optical characteristics of InGaN (In) GaN multiple quantum-well light-emitting diodes (LEDs) were investigated over a broad range of temperatures. The dependence of nonunity ideality factors extracted from the current-voltage analysis on temperature determines the carrier-transport mechanisms in the heterodevices. The pseudotemperatures To for the LEDs with multiquantum barriers and with GaN barriers were found to be 945 and 1385 K, respectively, at temperatures of 180-300 K while having values of 1195 and 2720 K below about 180 K. Correspondingly, the temperature-dependent electroluminescence observations suggest that the To anomaly caused the spectral intensity to deteriorate.",

author = "Nee, {Tzer En} and Wang, {Jen Cheng} and Shen, {Hui Tang} and Lin, {Chung Han} and Wu, {Ya Fen}",

year = "2006",

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T1 - Observations of electrical and luminescence anomalies in InGaN/GaN blue light-emitting diodes

AU - Nee, Tzer En

AU - Wang, Jen Cheng

AU - Shen, Hui Tang

AU - Lin, Chung Han

AU - Wu, Ya Fen

PY - 2006/7

Y1 - 2006/7

N2 - Unique correlations between the electrical and optical characteristics of InGaN (In) GaN multiple quantum-well light-emitting diodes (LEDs) were investigated over a broad range of temperatures. The dependence of nonunity ideality factors extracted from the current-voltage analysis on temperature determines the carrier-transport mechanisms in the heterodevices. The pseudotemperatures To for the LEDs with multiquantum barriers and with GaN barriers were found to be 945 and 1385 K, respectively, at temperatures of 180-300 K while having values of 1195 and 2720 K below about 180 K. Correspondingly, the temperature-dependent electroluminescence observations suggest that the To anomaly caused the spectral intensity to deteriorate.

AB - Unique correlations between the electrical and optical characteristics of InGaN (In) GaN multiple quantum-well light-emitting diodes (LEDs) were investigated over a broad range of temperatures. The dependence of nonunity ideality factors extracted from the current-voltage analysis on temperature determines the carrier-transport mechanisms in the heterodevices. The pseudotemperatures To for the LEDs with multiquantum barriers and with GaN barriers were found to be 945 and 1385 K, respectively, at temperatures of 180-300 K while having values of 1195 and 2720 K below about 180 K. Correspondingly, the temperature-dependent electroluminescence observations suggest that the To anomaly caused the spectral intensity to deteriorate.

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DO - 10.1116/1.2207152

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SN - 0734-2101

VL - 24

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EP - 1019

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

M1 - 114604JVA

ER -

Observations of electrical and luminescence anomalies in InGaN/GaN blue light-emitting diodes

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