Observations of electrical and luminescence anomalies in InGaN/GaN blue light-emitting diodes

Tzer En Nee*, Jen Cheng Wang, Hui Tang Shen, Chung Han Lin, Ya Fen Wu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

4 Scopus citations


Unique correlations between the electrical and optical characteristics of InGaN (In) GaN multiple quantum-well light-emitting diodes (LEDs) were investigated over a broad range of temperatures. The dependence of nonunity ideality factors extracted from the current-voltage analysis on temperature determines the carrier-transport mechanisms in the heterodevices. The pseudotemperatures To for the LEDs with multiquantum barriers and with GaN barriers were found to be 945 and 1385 K, respectively, at temperatures of 180-300 K while having values of 1195 and 2720 K below about 180 K. Correspondingly, the temperature-dependent electroluminescence observations suggest that the To anomaly caused the spectral intensity to deteriorate.

Original languageEnglish
Article number114604JVA
Pages (from-to)1016-1019
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
StatePublished - 07 2006


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