On-chip dual-band bandpass filter on a GaAs substrate

Hsuan Ling Kao; Cheng Lin Cho; Chih Sheng Yeh; Hsien Chin Chiu; Xin Dai; Xiu Yin Zhang

doi:10.1049/el.2013.1128

On-chip dual-band bandpass filter on a GaAs substrate

Hsuan Ling Kao, Cheng Lin Cho, Chih Sheng Yeh, Hsien Chin Chiu, Xin Dai, Xiu Yin Zhang

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

A dual-band bandpass filter in a millimetre-wave band that uses 0.5 μm GaAs pHEMT technology with two sets of stepped-impedance resonators, which results in a reduction in size, is presented. The two passband frequencies can be flexibly controlled by adjusting the lengths of the two sets of resonators. Two bandwidths can be tuned independently, using external quality factors and coupling coefficients. The fractional 1-dB bandwidths at 60 and 77 GHz are 8.6 and 4.1%, respectively. The measured S21 values at 60 and 77 GHz are - 2.26 and - 3.9 dB. Good performance is obtained in terms of the excellent microwave properties of the semi-insulating GaAs substrate, which makes this system attractive for wireless communication applications.

Original language	English
Pages (from-to)	1157-1159
Number of pages	3
Journal	Electronics Letters
Volume	49
Issue number	18
DOIs	https://doi.org/10.1049/el.2013.1128
State	Published - 29 08 2013

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10.1049/el.2013.1128

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abstract = "A dual-band bandpass filter in a millimetre-wave band that uses 0.5 μm GaAs pHEMT technology with two sets of stepped-impedance resonators, which results in a reduction in size, is presented. The two passband frequencies can be flexibly controlled by adjusting the lengths of the two sets of resonators. Two bandwidths can be tuned independently, using external quality factors and coupling coefficients. The fractional 1-dB bandwidths at 60 and 77 GHz are 8.6 and 4.1%, respectively. The measured S21 values at 60 and 77 GHz are - 2.26 and - 3.9 dB. Good performance is obtained in terms of the excellent microwave properties of the semi-insulating GaAs substrate, which makes this system attractive for wireless communication applications.",

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AU - Kao, Hsuan Ling

AU - Cho, Cheng Lin

AU - Yeh, Chih Sheng

AU - Chiu, Hsien Chin

AU - Dai, Xin

AU - Zhang, Xiu Yin

PY - 2013/8/29

Y1 - 2013/8/29

N2 - A dual-band bandpass filter in a millimetre-wave band that uses 0.5 μm GaAs pHEMT technology with two sets of stepped-impedance resonators, which results in a reduction in size, is presented. The two passband frequencies can be flexibly controlled by adjusting the lengths of the two sets of resonators. Two bandwidths can be tuned independently, using external quality factors and coupling coefficients. The fractional 1-dB bandwidths at 60 and 77 GHz are 8.6 and 4.1%, respectively. The measured S21 values at 60 and 77 GHz are - 2.26 and - 3.9 dB. Good performance is obtained in terms of the excellent microwave properties of the semi-insulating GaAs substrate, which makes this system attractive for wireless communication applications.

AB - A dual-band bandpass filter in a millimetre-wave band that uses 0.5 μm GaAs pHEMT technology with two sets of stepped-impedance resonators, which results in a reduction in size, is presented. The two passband frequencies can be flexibly controlled by adjusting the lengths of the two sets of resonators. Two bandwidths can be tuned independently, using external quality factors and coupling coefficients. The fractional 1-dB bandwidths at 60 and 77 GHz are 8.6 and 4.1%, respectively. The measured S21 values at 60 and 77 GHz are - 2.26 and - 3.9 dB. Good performance is obtained in terms of the excellent microwave properties of the semi-insulating GaAs substrate, which makes this system attractive for wireless communication applications.

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On-chip dual-band bandpass filter on a GaAs substrate

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