Abstract
This paper presents an S-band voltage-controlled oscillator (VCO) using a tunable half-mode substrate integrated waveguide (HMSIW) loaded with complementary split ring resonator (CSRR) in GaN-on-SiC high-electron-mobility transistor technology. A varactor connected to the center of the outer conductor of the HMSIW-CSRR changed the effective capacitance, resulting in a resonance frequency shift but a fixed transmission zero. Therefore, the S-band VCO can be tuned by the HMSIW-CSRR using harmonic suppression. The tunable HMSIW-CSRR VCO exhibited a frequency tuning range of 3.55–3.98 GHz with a varactor voltage of 0–6 V. The maximum output power was 21.1 dBm and rf-to-dc efficiency was 12.8% at 3.98 GHz. The lowest phase noise was −117 dBc/Hz with 1-MHz offset at a 3.56 GHz carrier frequency with 30.55 dBc of harmonic suppression.
Original language | English |
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Pages (from-to) | 1052-1059 |
Number of pages | 8 |
Journal | Journal of Electromagnetic Waves and Applications |
Volume | 33 |
Issue number | 8 |
DOIs | |
State | Published - 24 05 2019 |
Bibliographical note
Publisher Copyright:© 2019, © 2019 Informa UK Limited, trading as Taylor & Francis Group.
Keywords
- GaN-on-SiC
- Voltage-controlled oscillator
- harmonic suppression
- tunable HMSIW-CSRR