On-chip GaN-on-SiC VCO using a tunable substrate integrated waveguide loaded with complementary split ring resonator

Hsuan Ling Kao*, Cheng Lin Cho

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Abstract

This paper presents an S-band voltage-controlled oscillator (VCO) using a tunable half-mode substrate integrated waveguide (HMSIW) loaded with complementary split ring resonator (CSRR) in GaN-on-SiC high-electron-mobility transistor technology. A varactor connected to the center of the outer conductor of the HMSIW-CSRR changed the effective capacitance, resulting in a resonance frequency shift but a fixed transmission zero. Therefore, the S-band VCO can be tuned by the HMSIW-CSRR using harmonic suppression. The tunable HMSIW-CSRR VCO exhibited a frequency tuning range of 3.55–3.98 GHz with a varactor voltage of 0–6 V. The maximum output power was 21.1 dBm and rf-to-dc efficiency was 12.8% at 3.98 GHz. The lowest phase noise was −117 dBc/Hz with 1-MHz offset at a 3.56 GHz carrier frequency with 30.55 dBc of harmonic suppression.

Original languageEnglish
Pages (from-to)1052-1059
Number of pages8
JournalJournal of Electromagnetic Waves and Applications
Volume33
Issue number8
DOIs
StatePublished - 24 05 2019

Bibliographical note

Publisher Copyright:
© 2019, © 2019 Informa UK Limited, trading as Taylor & Francis Group.

Keywords

  • GaN-on-SiC
  • Voltage-controlled oscillator
  • harmonic suppression
  • tunable HMSIW-CSRR

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