On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector

Ping Yu Kuei*, Li Zen Hsieh, Liann Be Chang, Ming Jer Jeng, Ray Ming Lin

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review


In this study, we investigated the influence of ion implantation and post-implantation rapid thermal anneal (RTA) on the reflectivity spectrum of an AlGaAs distributed Bragg reflector (DBR). The peak wavelength of the reflectivity spectrum shifts toward longer wavelengths and the background reflectance increases after ion implantation. The calculated spectrum agrees well with the experimental observation. It can be used to understand the mechanisms of ion implantation on the reflectivity spectra. Four different ions (H+, O+, Si+ and P+) were implanted into DBR for comparison. Among these samples, the Si-implanted DBR has the largest amount of red-shift, and the hydrogen-implanted DBR are almost the same as unimplanted. In addition, post-implantation RTA would shift the reflectivity band back to its original position and lead to the recovery of the background reflectance, but degrade peak reflectance.

Original languageEnglish
Pages (from-to)6319-6322
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number10
StatePublished - 10 2003


  • DBR
  • Ion implantation
  • Peak wavelength
  • RTA
  • Red-shift


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