On the surface sulfidation of AlGaN/GaN schottky contacts

L. B. Chang*, N. C. Chen, C. H. Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Non-sulfur-treated, (NH4)2S-treated, and P 2S5/(NH4)2S-treated AlGaN/GaN Schottky contacts are prepared and characterized. The variations in their Schottky barrier height and leakage current are studied. Then an ultra violet light (UV) exposition is also made during some of the sulfidation processes from which a speeding degradation phenomenon is found and reported.

Original languageEnglish
Title of host publicationExtended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06
PublisherIEEE Computer Society
Pages258-261
Number of pages4
ISBN (Print)1424400473, 9781424400478
DOIs
StatePublished - 2006
EventExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 - Shanghai, China
Duration: 15 05 200616 05 2006

Publication series

NameExtended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Conference

ConferenceExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06
Country/TerritoryChina
CityShanghai
Period15/05/0616/05/06

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