@inproceedings{4290f5b20a5548bbbc988b9269942974,
title = "On the surface sulfidation of AlGaN/GaN schottky contacts",
abstract = "Non-sulfur-treated, (NH4)2S-treated, and P 2S5/(NH4)2S-treated AlGaN/GaN Schottky contacts are prepared and characterized. The variations in their Schottky barrier height and leakage current are studied. Then an ultra violet light (UV) exposition is also made during some of the sulfidation processes from which a speeding degradation phenomenon is found and reported.",
author = "Chang, {L. B.} and Chen, {N. C.} and Chang, {C. H.}",
year = "2006",
doi = "10.1109/iwjt.2006.220905",
language = "英语",
isbn = "1424400473",
series = "Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06",
publisher = "IEEE Computer Society",
pages = "258--261",
booktitle = "Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06",
address = "美国",
note = "Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 ; Conference date: 15-05-2006 Through 16-05-2006",
}