One-step formation of atomic-layered transistor by selective fluorination of graphene film

Kuan I. Ho, Jia Hong Liao, Chi Hsien Huang, Chang Lung Hsu, Lain Jong Li, Chao Sung Lai, Ching Yuan Su*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this work, the wafer scale fabrication of atomic layered transistors are demonstrated by selective fluorination of graphene with a remote CF4 plasma, where the generated F-radicals preferentially fluorinated graphene surface at low temperature (<200°C) while this technique suppress the defect formation by screening out the ion damage effect. The resultant grapehene shows electrical semiconducting and isolation after subjected to the fluorination for 5∼20min, respectively. A back-gate transistor is then fabricated with a one-step fluorination of graphene film on Si02 substrate. The chemical structure, C-F bonds, is well correlated to the electrical properties in fluorinated graphene by XPS, Raman spectroscopy and electrical meter. This efficient method provide electrical semiconducting and insulator of graphene with a large area and selective pattering, where it turns out the potential for the integration of electronics down to atomic layered scale.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Pages326-328
Number of pages3
DOIs
StatePublished - 2013
Event2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore
Duration: 02 01 201304 01 2013

Publication series

NameProceedings - Winter Simulation Conference
ISSN (Print)0891-7736

Conference

Conference2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Country/TerritorySingapore
CitySingapore
Period02/01/1304/01/13

Keywords

  • CF plasma and Transistor
  • Graphene

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