Optical investigation of the interdot carrier transfer process in InAs/GaAs quantum-dot heterosystems

Tzer En Nee; Jen Cheng Wang; Hui Tang Shen; Chao Ching Cheng; Ray Ming Lin

doi:10.1116/1.2138719

Optical investigation of the interdot carrier transfer process in InAs/GaAs quantum-dot heterosystems

Tzer En Nee^*, Jen Cheng Wang, Hui Tang Shen, Chao Ching Cheng, Ray Ming Lin

^*Corresponding author for this work

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

The carrier-transport characteristics of the low and high surface density InAsGaAs quantum-dot (QD) heterosystems are studied in depth using photoluminescence measurements. It is found that both the anomalous temperature- and photoexcitation-dependent phenomena can be attributed to the carrier-thermalization processes. Photogenerated carrier redistribution leads not only to linewidth broadening but also to emission blueshifts for the radiative transitions in QD ensembles under various pump intensities. The short dot distance of a high dot-density system facilitates thermally excited carrier redistribution. However, due to the inhibition of photocarrier transfers, QD heterostructures that have a long interdot spacing exhibit more excitation insensitivity.

Original language	English
Pages (from-to)	34-37
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	24
Issue number	1
DOIs	https://doi.org/10.1116/1.2138719
State	Published - 01 2006

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@article{bf69d5a6981340c1bb18eeb96a5018ae,

title = "Optical investigation of the interdot carrier transfer process in InAs/GaAs quantum-dot heterosystems",

abstract = "The carrier-transport characteristics of the low and high surface density InAsGaAs quantum-dot (QD) heterosystems are studied in depth using photoluminescence measurements. It is found that both the anomalous temperature- and photoexcitation-dependent phenomena can be attributed to the carrier-thermalization processes. Photogenerated carrier redistribution leads not only to linewidth broadening but also to emission blueshifts for the radiative transitions in QD ensembles under various pump intensities. The short dot distance of a high dot-density system facilitates thermally excited carrier redistribution. However, due to the inhibition of photocarrier transfers, QD heterostructures that have a long interdot spacing exhibit more excitation insensitivity.",

author = "Nee, {Tzer En} and Wang, {Jen Cheng} and Shen, {Hui Tang} and Cheng, {Chao Ching} and Lin, {Ray Ming}",

year = "2006",

month = jan,

doi = "10.1116/1.2138719",

language = "英语",

volume = "24",

pages = "34--37",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "1",

}

TY - JOUR

T1 - Optical investigation of the interdot carrier transfer process in InAs/GaAs quantum-dot heterosystems

AU - Nee, Tzer En

AU - Wang, Jen Cheng

AU - Shen, Hui Tang

AU - Cheng, Chao Ching

AU - Lin, Ray Ming

PY - 2006/1

Y1 - 2006/1

N2 - The carrier-transport characteristics of the low and high surface density InAsGaAs quantum-dot (QD) heterosystems are studied in depth using photoluminescence measurements. It is found that both the anomalous temperature- and photoexcitation-dependent phenomena can be attributed to the carrier-thermalization processes. Photogenerated carrier redistribution leads not only to linewidth broadening but also to emission blueshifts for the radiative transitions in QD ensembles under various pump intensities. The short dot distance of a high dot-density system facilitates thermally excited carrier redistribution. However, due to the inhibition of photocarrier transfers, QD heterostructures that have a long interdot spacing exhibit more excitation insensitivity.

AB - The carrier-transport characteristics of the low and high surface density InAsGaAs quantum-dot (QD) heterosystems are studied in depth using photoluminescence measurements. It is found that both the anomalous temperature- and photoexcitation-dependent phenomena can be attributed to the carrier-thermalization processes. Photogenerated carrier redistribution leads not only to linewidth broadening but also to emission blueshifts for the radiative transitions in QD ensembles under various pump intensities. The short dot distance of a high dot-density system facilitates thermally excited carrier redistribution. However, due to the inhibition of photocarrier transfers, QD heterostructures that have a long interdot spacing exhibit more excitation insensitivity.

UR - http://www.scopus.com/inward/record.url?scp=31544467330&partnerID=8YFLogxK

U2 - 10.1116/1.2138719

DO - 10.1116/1.2138719

M3 - 文章

AN - SCOPUS:31544467330

SN - 1071-1023

VL - 24

SP - 34

EP - 37

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

Optical investigation of the interdot carrier transfer process in InAs/GaAs quantum-dot heterosystems

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