Abstract
The optical joint densities of states of three InGaN!GaN-based light-emitting diodes with different emission wavelengths (violet, blue and green) operated at various currents were investigated. The results indicate that the blueshift of the emission with increasing current is related to the variation in optical joint density of states. Thus, the blueshift is ascribed to the screening of the piezoelectric field by carriers. A tail at the low-energy end of the density of states, corresponding to localized states, was found, and the presence of these tails broadens the spectra of the devices.
Original language | English |
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Pages (from-to) | 4300-4303 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 406 |
Issue number | 22 |
DOIs | |
State | Published - 15 11 2011 |
Keywords
- Carrier screening
- InGaN/GaN
- Light-emitting diodes (LED5)
- Localized states
- Pietoelectric