Optical properties of Berthelot-type behaviors in quaternary AlInGaN multiple quantum well heterstructures

Cheng Wei Hung*, Chih Chun Ke, Da Chuan Kuo, Wei Jen Chen, Hui Tang Shen, Ya Fen Wu, Jen Cheng Wang, Tzer En Nee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The anomalous Berthelot-type optical properties of quaternary AlInGaN heterostructure with different quantum well pairs have been systematically investigated in this study. The Berthelot-type model refers to the temperature dependence of emission intensity with blue then red shift behavior in disorder material system. The photoluminescence of the AlInGaN heterostructures is also found to exhibit such unique luminescence features as S-shaped emission peak energy similar to Berthelot-type properties over temperature. We ascribed the phenomenon to the spinodal decompositions, which will lead to the appearance of the Berthelot-type behavior. The increase of quantum well pairs will cause the incorporation of indium and/or aluminum atoms in the AlInGaN nanostructures more obviously, resulting in augmentation of the degree of crystalline randomization. In other words, the higher degree of disorder in AlInGaN heterostructures is observed to manifest not only the extension of static microbarrier width, but also the enhancement of carrier localization effects.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices II
DOIs
StatePublished - 2007
EventGallium Nitride Materials and Devices II - San Jose, CA, United States
Duration: 22 01 200725 01 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6473
ISSN (Print)0277-786X

Conference

ConferenceGallium Nitride Materials and Devices II
Country/TerritoryUnited States
CitySan Jose, CA
Period22/01/0725/01/07

Keywords

  • AlInGaN
  • Berthelot-type
  • Multiple quantum well

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