@inproceedings{a2b17cf999914a2896567fa478e97879,
title = "Optical properties of Berthelot-type behaviors in quaternary AlInGaN multiple quantum well heterstructures",
abstract = "The anomalous Berthelot-type optical properties of quaternary AlInGaN heterostructure with different quantum well pairs have been systematically investigated in this study. The Berthelot-type model refers to the temperature dependence of emission intensity with blue then red shift behavior in disorder material system. The photoluminescence of the AlInGaN heterostructures is also found to exhibit such unique luminescence features as S-shaped emission peak energy similar to Berthelot-type properties over temperature. We ascribed the phenomenon to the spinodal decompositions, which will lead to the appearance of the Berthelot-type behavior. The increase of quantum well pairs will cause the incorporation of indium and/or aluminum atoms in the AlInGaN nanostructures more obviously, resulting in augmentation of the degree of crystalline randomization. In other words, the higher degree of disorder in AlInGaN heterostructures is observed to manifest not only the extension of static microbarrier width, but also the enhancement of carrier localization effects.",
keywords = "AlInGaN, Berthelot-type, Multiple quantum well",
author = "Hung, \{Cheng Wei\} and Ke, \{Chih Chun\} and Kuo, \{Da Chuan\} and Chen, \{Wei Jen\} and Shen, \{Hui Tang\} and Wu, \{Ya Fen\} and Wang, \{Jen Cheng\} and Nee, \{Tzer En\}",
year = "2007",
doi = "10.1117/12.703478",
language = "英语",
isbn = "0819465860",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Gallium Nitride Materials and Devices II",
note = "Gallium Nitride Materials and Devices II ; Conference date: 22-01-2007 Through 25-01-2007",
}