Optical properties of In 2 O 3 oxidized from InN deposited by reactive magnetron sputtering

Lung Chien Chen*, Wen How Lan, Ray Ming Lin, Hue Tang Shen, Hung Chang Chen

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

14 Scopus citations

Abstract

Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In 2 O 3 films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In 2 O 3 :Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively.

Original languageEnglish
Pages (from-to)8438-8441
Number of pages4
JournalApplied Surface Science
Volume252
Issue number24
DOIs
StatePublished - 15 10 2006

Keywords

  • In O
  • InN
  • Photoluminescence
  • Reactive magnetron sputtering

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