Optical properties of indium nitride nanorods prepared by chemical-beam epitaxy

Chih Kang Chao; Hsiang Szu Chang; Tzu Min Hsu; Chien Nan Hsiao; Chi Chung Kei; Shou Yi Kuo; Jen Inn Chyi

doi:10.1088/0957-4484/17/15/053

Optical properties of indium nitride nanorods prepared by chemical-beam epitaxy

Chih Kang Chao^*
, Hsiang Szu Chang
, Tzu Min Hsu
, Chien Nan Hsiao
, Chi Chung Kei
, Shou Yi Kuo
, Jen Inn Chyi

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

27 Scopus citations

Abstract

The optical properties of indium nitride nanorods grown by chemical-beam epitaxy are investigated by photoluminescence (PL) and Raman spectroscopy. The PL peaks show a blue shift from 0.69 to 0.79eV, which is associated with a decrease in the size of the nanorods from 40 to 5nm. Judging from the Raman spectra and transmission electron diffraction of these nanorods, it can be concluded that the quantum size effect is the most likely factor causing the PL shift, rather than the strain or Moss-Burstein effects.

Original language	English
Article number	053
Pages (from-to)	3930-3932
Number of pages	3
Journal	Nanotechnology
Volume	17
Issue number	15
DOIs	https://doi.org/10.1088/0957-4484/17/15/053
State	Published - 14 08 2006
Externally published	Yes

Access to Document

10.1088/0957-4484/17/15/053

Cite this

@article{1b6a414bab3042269469f239ef55c3c2,

title = "Optical properties of indium nitride nanorods prepared by chemical-beam epitaxy",

abstract = "The optical properties of indium nitride nanorods grown by chemical-beam epitaxy are investigated by photoluminescence (PL) and Raman spectroscopy. The PL peaks show a blue shift from 0.69 to 0.79eV, which is associated with a decrease in the size of the nanorods from 40 to 5nm. Judging from the Raman spectra and transmission electron diffraction of these nanorods, it can be concluded that the quantum size effect is the most likely factor causing the PL shift, rather than the strain or Moss-Burstein effects.",

author = "Chao, \{Chih Kang\} and Chang, \{Hsiang Szu\} and Hsu, \{Tzu Min\} and Hsiao, \{Chien Nan\} and Kei, \{Chi Chung\} and Kuo, \{Shou Yi\} and Chyi, \{Jen Inn\}",

year = "2006",

month = aug,

day = "14",

doi = "10.1088/0957-4484/17/15/053",

language = "英语",

volume = "17",

pages = "3930--3932",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "15",

}

TY - JOUR

T1 - Optical properties of indium nitride nanorods prepared by chemical-beam epitaxy

AU - Chao, Chih Kang

AU - Chang, Hsiang Szu

AU - Hsu, Tzu Min

AU - Hsiao, Chien Nan

AU - Kei, Chi Chung

AU - Kuo, Shou Yi

AU - Chyi, Jen Inn

PY - 2006/8/14

Y1 - 2006/8/14

N2 - The optical properties of indium nitride nanorods grown by chemical-beam epitaxy are investigated by photoluminescence (PL) and Raman spectroscopy. The PL peaks show a blue shift from 0.69 to 0.79eV, which is associated with a decrease in the size of the nanorods from 40 to 5nm. Judging from the Raman spectra and transmission electron diffraction of these nanorods, it can be concluded that the quantum size effect is the most likely factor causing the PL shift, rather than the strain or Moss-Burstein effects.

AB - The optical properties of indium nitride nanorods grown by chemical-beam epitaxy are investigated by photoluminescence (PL) and Raman spectroscopy. The PL peaks show a blue shift from 0.69 to 0.79eV, which is associated with a decrease in the size of the nanorods from 40 to 5nm. Judging from the Raman spectra and transmission electron diffraction of these nanorods, it can be concluded that the quantum size effect is the most likely factor causing the PL shift, rather than the strain or Moss-Burstein effects.

UR - https://www.scopus.com/pages/publications/33748916302

U2 - 10.1088/0957-4484/17/15/053

DO - 10.1088/0957-4484/17/15/053

M3 - 文章

AN - SCOPUS:33748916302

SN - 0957-4484

VL - 17

SP - 3930

EP - 3932

JO - Nanotechnology

JF - Nanotechnology

IS - 15

M1 - 053

ER -

Optical properties of indium nitride nanorods prepared by chemical-beam epitaxy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this