Optical recombination-emission characteristics and surface morphologies of InAs quantum dots grown on misoriented GaAs substrate by MOCVD

M. Y. Hsu; S. F. Tang; C. D. Chiang; C. C. Su; L. C. Wang; C. T. Kuo

doi:10.1016/j.tsf.2005.07.078

Optical recombination-emission characteristics and surface morphologies of InAs quantum dots grown on misoriented GaAs substrate by MOCVD

M. Y. Hsu
, S. F. Tang^*
, C. D. Chiang
, C. C. Su
, L. C. Wang
, C. T. Kuo

^*Corresponding author for this work

National Taipei University of Technology
Chung-shan Institute of Science and Technology Taiwan
National Yang Ming Chiao Tung University

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The InAs quantum dot (QD) structures grown on (100) 2°, 6°, 10°, 15° off-angles to (111)A GaAs substrate have been investigated by atomic force microscopy (AFM) and cryogenic photoluminescence (PL). The exact-angle InAs/GaAs is used as the reference sample. The blue shift of PL peak spectra with increasing misoriented scales has also been observed experimentally. In this work, we demonstrated that different off-angle substrates would influence the distribution and uniformity of QD due to variant surface potential energies, which are responsible for the two-stage process (migration and nucleation) of InAs adatoms on the off-angle substrates.

Original language	English
Pages (from-to)	183-187
Number of pages	5
Journal	Thin Solid Films
Volume	498
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.078
State	Published - 01 03 2006
Externally published	Yes
Event	Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - Duration: 12 11 2004 → 14 11 2004

Keywords

AFM
Metal-organic chemical vapour deposition (MOCVD)
PL
Quantum dot infrared photodetector (QDIP)

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10.1016/j.tsf.2005.07.078

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title = "Optical recombination-emission characteristics and surface morphologies of InAs quantum dots grown on misoriented GaAs substrate by MOCVD",

abstract = "The InAs quantum dot (QD) structures grown on (100) 2°, 6°, 10°, 15° off-angles to (111)A GaAs substrate have been investigated by atomic force microscopy (AFM) and cryogenic photoluminescence (PL). The exact-angle InAs/GaAs is used as the reference sample. The blue shift of PL peak spectra with increasing misoriented scales has also been observed experimentally. In this work, we demonstrated that different off-angle substrates would influence the distribution and uniformity of QD due to variant surface potential energies, which are responsible for the two-stage process (migration and nucleation) of InAs adatoms on the off-angle substrates.",

keywords = "AFM, Metal-organic chemical vapour deposition (MOCVD), PL, Quantum dot infrared photodetector (QDIP)",

author = "Hsu, \{M. Y.\} and Tang, \{S. F.\} and Chiang, \{C. D.\} and Su, \{C. C.\} and Wang, \{L. C.\} and Kuo, \{C. T.\}",

year = "2006",

month = mar,

day = "1",

doi = "10.1016/j.tsf.2005.07.078",

language = "英语",

volume = "498",

pages = "183--187",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

note = "Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD ; Conference date: 12-11-2004 Through 14-11-2004",

}

TY - JOUR

T1 - Optical recombination-emission characteristics and surface morphologies of InAs quantum dots grown on misoriented GaAs substrate by MOCVD

AU - Hsu, M. Y.

AU - Tang, S. F.

AU - Chiang, C. D.

AU - Su, C. C.

AU - Wang, L. C.

AU - Kuo, C. T.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - The InAs quantum dot (QD) structures grown on (100) 2°, 6°, 10°, 15° off-angles to (111)A GaAs substrate have been investigated by atomic force microscopy (AFM) and cryogenic photoluminescence (PL). The exact-angle InAs/GaAs is used as the reference sample. The blue shift of PL peak spectra with increasing misoriented scales has also been observed experimentally. In this work, we demonstrated that different off-angle substrates would influence the distribution and uniformity of QD due to variant surface potential energies, which are responsible for the two-stage process (migration and nucleation) of InAs adatoms on the off-angle substrates.

AB - The InAs quantum dot (QD) structures grown on (100) 2°, 6°, 10°, 15° off-angles to (111)A GaAs substrate have been investigated by atomic force microscopy (AFM) and cryogenic photoluminescence (PL). The exact-angle InAs/GaAs is used as the reference sample. The blue shift of PL peak spectra with increasing misoriented scales has also been observed experimentally. In this work, we demonstrated that different off-angle substrates would influence the distribution and uniformity of QD due to variant surface potential energies, which are responsible for the two-stage process (migration and nucleation) of InAs adatoms on the off-angle substrates.

KW - AFM

KW - Metal-organic chemical vapour deposition (MOCVD)

KW - PL

KW - Quantum dot infrared photodetector (QDIP)

UR - https://www.scopus.com/pages/publications/30944460321

U2 - 10.1016/j.tsf.2005.07.078

DO - 10.1016/j.tsf.2005.07.078

M3 - 会议文章

AN - SCOPUS:30944460321

SN - 0040-6090

VL - 498

SP - 183

EP - 187

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD

Y2 - 12 November 2004 through 14 November 2004

ER -

Optical recombination-emission characteristics and surface morphologies of InAs quantum dots grown on misoriented GaAs substrate by MOCVD

Abstract

Keywords

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