Optimization of CDS buffer layer on the performance of copper indium gallium selenide solar cells

Ming Yang Hsieh; Shou Yi Kuo; Fang I. Lai; Ming Hsuan Kao; Pei Hsuan Huang; Hsun Wen Wang; Min An Tsai; Hao Chung Kuo

Optimization of CDS buffer layer on the performance of copper indium gallium selenide solar cells

Ming Yang Hsieh
, Shou Yi Kuo
, Fang I. Lai
, Ming Hsuan Kao
, Pei Hsuan Huang
, Hsun Wen Wang
, Min An Tsai
, Hao Chung Kuo

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

From this research, we report on the performances of Cu(In,Ga) Se ₂ (CIGS) thin film solar cells device simulation of the carrier concentration and thickness of CdS buffer layer which were respectively varied from 10¹² to 10²⁰ cm^-3 and 10 nm to 100 nm, to find out an optimum thickness of around 40-50 nm of high-efficiency CdS buffer layer, the optimum of carrier concentration is found to be 10¹⁷ cm^-3 revealed the best efficiency of 18.20%.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Pages	1532-1534
Number of pages	3
State	Published - 2011
Event	Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, Australia Duration: 28 08 2011 → 01 09 2011

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Country/Territory	Australia
City	Sydney
Period	28/08/11 → 01/09/11

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Cite this

@inproceedings{5574751fb6964d2e860d4ea771b56e7a,

title = "Optimization of CDS buffer layer on the performance of copper indium gallium selenide solar cells",

abstract = "From this research, we report on the performances of Cu(In,Ga) Se 2 (CIGS) thin film solar cells device simulation of the carrier concentration and thickness of CdS buffer layer which were respectively varied from 1012 to 1020 cm-3 and 10 nm to 100 nm, to find out an optimum thickness of around 40-50 nm of high-efficiency CdS buffer layer, the optimum of carrier concentration is found to be 1017 cm-3 revealed the best efficiency of 18.20\%.",

author = "Hsieh, \{Ming Yang\} and Kuo, \{Shou Yi\} and Lai, \{Fang I.\} and Kao, \{Ming Hsuan\} and Huang, \{Pei Hsuan\} and Wang, \{Hsun Wen\} and Tsai, \{Min An\} and Kuo, \{Hao Chung\}",

year = "2011",

language = "英语",

isbn = "9780977565771",

series = "Optics InfoBase Conference Papers",

pages = "1532--1534",

booktitle = "Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011",

note = "Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 ; Conference date: 28-08-2011 Through 01-09-2011",

}

Hsieh, MY, Kuo, SY, Lai, FI, Kao, MH, Huang, PH, Wang, HW, Tsai, MA & Kuo, HC 2011, Optimization of CDS buffer layer on the performance of copper indium gallium selenide solar cells. in Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011. Optics InfoBase Conference Papers, pp. 1532-1534, Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011, Sydney, Australia, 28/08/11.

Optimization of CDS buffer layer on the performance of copper indium gallium selenide solar cells. / Hsieh, Ming Yang; Kuo, Shou Yi; Lai, Fang I. et al.
Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011. 2011. p. 1532-1534 (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Optimization of CDS buffer layer on the performance of copper indium gallium selenide solar cells

AU - Hsieh, Ming Yang

AU - Kuo, Shou Yi

AU - Lai, Fang I.

AU - Kao, Ming Hsuan

AU - Huang, Pei Hsuan

AU - Wang, Hsun Wen

AU - Tsai, Min An

AU - Kuo, Hao Chung

PY - 2011

Y1 - 2011

N2 - From this research, we report on the performances of Cu(In,Ga) Se 2 (CIGS) thin film solar cells device simulation of the carrier concentration and thickness of CdS buffer layer which were respectively varied from 1012 to 1020 cm-3 and 10 nm to 100 nm, to find out an optimum thickness of around 40-50 nm of high-efficiency CdS buffer layer, the optimum of carrier concentration is found to be 1017 cm-3 revealed the best efficiency of 18.20%.

AB - From this research, we report on the performances of Cu(In,Ga) Se 2 (CIGS) thin film solar cells device simulation of the carrier concentration and thickness of CdS buffer layer which were respectively varied from 1012 to 1020 cm-3 and 10 nm to 100 nm, to find out an optimum thickness of around 40-50 nm of high-efficiency CdS buffer layer, the optimum of carrier concentration is found to be 1017 cm-3 revealed the best efficiency of 18.20%.

UR - https://www.scopus.com/pages/publications/84893592821

M3 - 会议稿件

AN - SCOPUS:84893592821

SN - 9780977565771

T3 - Optics InfoBase Conference Papers

SP - 1532

EP - 1534

BT - Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011

T2 - Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011

Y2 - 28 August 2011 through 1 September 2011

ER -

Optimization of CDS buffer layer on the performance of copper indium gallium selenide solar cells

Abstract

Publication series

Conference

UN SDGs

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