Optimization of DC-sputtered molybdenum back contact layers

Jhong Hao Jiang, Shou Yi Kuo*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The Mo back contact layers were deposited by DC sputtering to investigate into that optimization the properties for CIGS solar cells. The working pressure and thickness of Mo thin films were varied during deposited process. When the working pressure at 1.5 mtorr and thickness of Mo thin films at 1000 nm, the properties of Mo thin films were best. The FWHM about 0.5° and electrical resistivity can arrive about 2.5 × 10-5 Ω-cm.

Original languageEnglish
Title of host publication2014 International Symposium on Next-Generation Electronics, ISNE 2014
PublisherIEEE Computer Society
ISBN (Print)9781479947805
DOIs
StatePublished - 2014
Event3rd International Symposium on Next-Generation Electronics, ISNE 2014 - Taoyuan, Taiwan
Duration: 07 05 201410 05 2014

Publication series

Name2014 International Symposium on Next-Generation Electronics, ISNE 2014

Conference

Conference3rd International Symposium on Next-Generation Electronics, ISNE 2014
Country/TerritoryTaiwan
CityTaoyuan
Period07/05/1410/05/14

Keywords

  • CIGS solr cell
  • DC sputtering
  • Mo back contact layers

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