Optimization of DC-sputtered molybdenum back contact layers

Jhong Hao Jiang; Shou Yi Kuo

doi:10.1109/ISNE.2014.6839351

Optimization of DC-sputtered molybdenum back contact layers

Jhong Hao Jiang
, Shou Yi Kuo^*

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The Mo back contact layers were deposited by DC sputtering to investigate into that optimization the properties for CIGS solar cells. The working pressure and thickness of Mo thin films were varied during deposited process. When the working pressure at 1.5 mtorr and thickness of Mo thin films at 1000 nm, the properties of Mo thin films were best. The FWHM about 0.5° and electrical resistivity can arrive about 2.5 × 10^-5 Ω-cm.

Original language	English
Title of host publication	2014 International Symposium on Next-Generation Electronics, ISNE 2014
Publisher	IEEE Computer Society
ISBN (Print)	9781479947805
DOIs	https://doi.org/10.1109/ISNE.2014.6839351
State	Published - 2014
Event	3rd International Symposium on Next-Generation Electronics, ISNE 2014 - Taoyuan, Taiwan Duration: 07 05 2014 → 10 05 2014

Publication series

Name	2014 International Symposium on Next-Generation Electronics, ISNE 2014

Conference

Conference	3rd International Symposium on Next-Generation Electronics, ISNE 2014
Country/Territory	Taiwan
City	Taoyuan
Period	07/05/14 → 10/05/14

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CIGS solr cell
DC sputtering
Mo back contact layers

Access to Document

10.1109/ISNE.2014.6839351

Cite this

@inproceedings{b91893ac1df6457d862b63000355ff0b,

title = "Optimization of DC-sputtered molybdenum back contact layers",

abstract = "The Mo back contact layers were deposited by DC sputtering to investigate into that optimization the properties for CIGS solar cells. The working pressure and thickness of Mo thin films were varied during deposited process. When the working pressure at 1.5 mtorr and thickness of Mo thin films at 1000 nm, the properties of Mo thin films were best. The FWHM about 0.5° and electrical resistivity can arrive about 2.5 × 10-5 Ω-cm.",

keywords = "CIGS solr cell, DC sputtering, Mo back contact layers",

author = "Jiang, \{Jhong Hao\} and Kuo, \{Shou Yi\}",

year = "2014",

doi = "10.1109/ISNE.2014.6839351",

language = "英语",

isbn = "9781479947805",

series = "2014 International Symposium on Next-Generation Electronics, ISNE 2014",

publisher = "IEEE Computer Society",

booktitle = "2014 International Symposium on Next-Generation Electronics, ISNE 2014",

address = "美国",

note = "3rd International Symposium on Next-Generation Electronics, ISNE 2014 ; Conference date: 07-05-2014 Through 10-05-2014",

}

Jiang, JH & Kuo, SY 2014, Optimization of DC-sputtered molybdenum back contact layers. in 2014 International Symposium on Next-Generation Electronics, ISNE 2014., 6839351, 2014 International Symposium on Next-Generation Electronics, ISNE 2014, IEEE Computer Society, 3rd International Symposium on Next-Generation Electronics, ISNE 2014, Taoyuan, Taiwan, 07/05/14. https://doi.org/10.1109/ISNE.2014.6839351

Optimization of DC-sputtered molybdenum back contact layers. / Jiang, Jhong Hao; Kuo, Shou Yi.
2014 International Symposium on Next-Generation Electronics, ISNE 2014. IEEE Computer Society, 2014. 6839351 (2014 International Symposium on Next-Generation Electronics, ISNE 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Optimization of DC-sputtered molybdenum back contact layers

AU - Jiang, Jhong Hao

AU - Kuo, Shou Yi

PY - 2014

Y1 - 2014

N2 - The Mo back contact layers were deposited by DC sputtering to investigate into that optimization the properties for CIGS solar cells. The working pressure and thickness of Mo thin films were varied during deposited process. When the working pressure at 1.5 mtorr and thickness of Mo thin films at 1000 nm, the properties of Mo thin films were best. The FWHM about 0.5° and electrical resistivity can arrive about 2.5 × 10-5 Ω-cm.

AB - The Mo back contact layers were deposited by DC sputtering to investigate into that optimization the properties for CIGS solar cells. The working pressure and thickness of Mo thin films were varied during deposited process. When the working pressure at 1.5 mtorr and thickness of Mo thin films at 1000 nm, the properties of Mo thin films were best. The FWHM about 0.5° and electrical resistivity can arrive about 2.5 × 10-5 Ω-cm.

KW - CIGS solr cell

KW - DC sputtering

KW - Mo back contact layers

UR - https://www.scopus.com/pages/publications/84903851656

U2 - 10.1109/ISNE.2014.6839351

DO - 10.1109/ISNE.2014.6839351

M3 - 会议稿件

AN - SCOPUS:84903851656

SN - 9781479947805

T3 - 2014 International Symposium on Next-Generation Electronics, ISNE 2014

BT - 2014 International Symposium on Next-Generation Electronics, ISNE 2014

PB - IEEE Computer Society

T2 - 3rd International Symposium on Next-Generation Electronics, ISNE 2014

Y2 - 7 May 2014 through 10 May 2014

ER -

Optimization of DC-sputtered molybdenum back contact layers

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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