Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode

Bing Xu; Jun Liang Zhao; Shu Guo Wang; Hai Tao Dai; Sheng Fu Yu; Ray Ming Lin; Fu Chuan Chu; Chou Hsiung Huang; Xiao Wei Sun

doi:10.1117/12.2001788

Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode

Bing Xu, Jun Liang Zhao, Shu Guo Wang, Hai Tao Dai, Sheng Fu Yu, Ray Ming Lin, Fu Chuan Chu, Chou Hsiung Huang, Xiao Wei Sun

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

InGaN/GaN blue light emitting diodes with varied quantum well thickness from 2.4 nm to 3.6 nm are fabricated and characterized by atmosphere pressure metalorganic chemical vapor deposition (AP-MOCVD). Experimental results show that the exciton localization effect is enhanced from 21.76 to 23.48 by increasing the quantum well thickness from 2.4 nm to 2.7 nm. However, with the further increase of quantum well thickness, the exciton localization effect becomes weaker. Meanwhile, the peak wavelength of electroluminescence redshift with the increase of well thickness due to the larger quantum confined Stark effect (QCSE). In addition, the efficiency droop can be improved by increasing the well thickness.

Original language	English
Title of host publication	Light-Emitting Diodes
Subtitle of host publication	Materials, Devices, and Applications for Solid State Lighting XVII
DOIs	https://doi.org/10.1117/12.2001788
State	Published - 2013
Event	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII - San Francisco, CA, United States Duration: 04 02 2013 → 07 02 2013

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8641
ISSN (Print)	0277-786X

Conference

Conference	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII
Country/Territory	United States
City	San Francisco, CA
Period	04/02/13 → 07/02/13

Keywords

Efficiency droop
Localized state
MOCVD
QCSE

Access to Document

10.1117/12.2001788

Cite this

Xu, B., Zhao, J. L., Wang, S. G., Dai, H. T., Yu, S. F., Lin, R. M., Chu, F. C., Huang, C. H., & Sun, X. W. (2013). Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII Article 864103 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8641). https://doi.org/10.1117/12.2001788

@inproceedings{2b3b822d10b745c09896e4c4bcb436cc,

title = "Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode",

abstract = "InGaN/GaN blue light emitting diodes with varied quantum well thickness from 2.4 nm to 3.6 nm are fabricated and characterized by atmosphere pressure metalorganic chemical vapor deposition (AP-MOCVD). Experimental results show that the exciton localization effect is enhanced from 21.76 to 23.48 by increasing the quantum well thickness from 2.4 nm to 2.7 nm. However, with the further increase of quantum well thickness, the exciton localization effect becomes weaker. Meanwhile, the peak wavelength of electroluminescence redshift with the increase of well thickness due to the larger quantum confined Stark effect (QCSE). In addition, the efficiency droop can be improved by increasing the well thickness.",

keywords = "Efficiency droop, Localized state, MOCVD, QCSE",

author = "Bing Xu and Zhao, \{Jun Liang\} and Wang, \{Shu Guo\} and Dai, \{Hai Tao\} and Yu, \{Sheng Fu\} and Lin, \{Ray Ming\} and Chu, \{Fu Chuan\} and Huang, \{Chou Hsiung\} and Sun, \{Xiao Wei\}",

year = "2013",

doi = "10.1117/12.2001788",

language = "英语",

isbn = "9780819494108",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Light-Emitting Diodes",

note = "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII ; Conference date: 04-02-2013 Through 07-02-2013",

}

Xu, B, Zhao, JL, Wang, SG, Dai, HT, Yu, SF, Lin, RM, Chu, FC, Huang, CH & Sun, XW 2013, Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode. in Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII., 864103, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, San Francisco, CA, United States, 04/02/13. https://doi.org/10.1117/12.2001788

Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode. / Xu, Bing; Zhao, Jun Liang; Wang, Shu Guo et al.
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII. 2013. 864103 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8641).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode

AU - Xu, Bing

AU - Zhao, Jun Liang

AU - Wang, Shu Guo

AU - Dai, Hai Tao

AU - Yu, Sheng Fu

AU - Lin, Ray Ming

AU - Chu, Fu Chuan

AU - Huang, Chou Hsiung

AU - Sun, Xiao Wei

PY - 2013

Y1 - 2013

N2 - InGaN/GaN blue light emitting diodes with varied quantum well thickness from 2.4 nm to 3.6 nm are fabricated and characterized by atmosphere pressure metalorganic chemical vapor deposition (AP-MOCVD). Experimental results show that the exciton localization effect is enhanced from 21.76 to 23.48 by increasing the quantum well thickness from 2.4 nm to 2.7 nm. However, with the further increase of quantum well thickness, the exciton localization effect becomes weaker. Meanwhile, the peak wavelength of electroluminescence redshift with the increase of well thickness due to the larger quantum confined Stark effect (QCSE). In addition, the efficiency droop can be improved by increasing the well thickness.

AB - InGaN/GaN blue light emitting diodes with varied quantum well thickness from 2.4 nm to 3.6 nm are fabricated and characterized by atmosphere pressure metalorganic chemical vapor deposition (AP-MOCVD). Experimental results show that the exciton localization effect is enhanced from 21.76 to 23.48 by increasing the quantum well thickness from 2.4 nm to 2.7 nm. However, with the further increase of quantum well thickness, the exciton localization effect becomes weaker. Meanwhile, the peak wavelength of electroluminescence redshift with the increase of well thickness due to the larger quantum confined Stark effect (QCSE). In addition, the efficiency droop can be improved by increasing the well thickness.

KW - Efficiency droop

KW - Localized state

KW - MOCVD

KW - QCSE

UR - https://www.scopus.com/pages/publications/84878309682

U2 - 10.1117/12.2001788

DO - 10.1117/12.2001788

M3 - 会议稿件

AN - SCOPUS:84878309682

SN - 9780819494108

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Light-Emitting Diodes

T2 - Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII

Y2 - 4 February 2013 through 7 February 2013

ER -

Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode

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