Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure

Pei Hsuan Huang; Hsun Wen Wang; Min An Tsai; Fang I. Lai; Shou Yi Kuo; H. C. Kuo; Sien Chi

doi:10.1109/PVSC.2011.6186360

Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure

Pei Hsuan Huang^*
, Hsun Wen Wang
, Min An Tsai
, Fang I. Lai
, Shou Yi Kuo
, H. C. Kuo
, Sien Chi

^*Corresponding author for this work

Department of Electronic Engineering

Yuan Ze University
National Yang Ming Chiao Tung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In this study, we design the InGaP/GaAs/Ge triple-junction solar cells by optimizing short-circuit current matching between top and middle cells using Crosslight APSYS software. The base thickness of top InGaP cell is optimized at 0.36 um and the base thickness of middle GaAs cell is optimized at 3.2 um under AM1.5G illumination. For the optimized solar cell with nanorod arrays surface texture structure, the maximum I _sc is 13.512 mA/cm ², the open-circuit voltage (V _oc) is 2.614 V, and the conversion efficiency (η) is 30.686 %. The enhancement of the I _sc and the efficiency were 13.68 % and 12.24 %.

Original language	English
Title of host publication	Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages	2071-2073
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2011.6186360
State	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 19 06 2011 → 24 06 2011

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	19/06/11 → 24/06/11

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1109/PVSC.2011.6186360

Cite this

Huang, P. H., Wang, H. W., Tsai, M. A., Lai, F. I., Kuo, S. Y., Kuo, H. C., & Chi, S. (2011). Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 2071-2073). Article 6186360 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6186360

@inproceedings{ea013b52b9d24a80a059ddb519175fa5,

title = "Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure",

abstract = "In this study, we design the InGaP/GaAs/Ge triple-junction solar cells by optimizing short-circuit current matching between top and middle cells using Crosslight APSYS software. The base thickness of top InGaP cell is optimized at 0.36 um and the base thickness of middle GaAs cell is optimized at 3.2 um under AM1.5G illumination. For the optimized solar cell with nanorod arrays surface texture structure, the maximum I sc is 13.512 mA/cm 2, the open-circuit voltage (V oc) is 2.614 V, and the conversion efficiency (η) is 30.686 \%. The enhancement of the I sc and the efficiency were 13.68 \% and 12.24 \%.",

author = "Huang, \{Pei Hsuan\} and Wang, \{Hsun Wen\} and Tsai, \{Min An\} and Lai, \{Fang I.\} and Kuo, \{Shou Yi\} and Kuo, \{H. C.\} and Sien Chi",

year = "2011",

doi = "10.1109/PVSC.2011.6186360",

language = "英语",

isbn = "9781424499656",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "2071--2073",

booktitle = "Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011",

note = "37th IEEE Photovoltaic Specialists Conference, PVSC 2011 ; Conference date: 19-06-2011 Through 24-06-2011",

}

Huang, PH, Wang, HW, Tsai, MA, Lai, FI, Kuo, SY, Kuo, HC & Chi, S 2011, Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6186360, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2071-2073, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 19/06/11. https://doi.org/10.1109/PVSC.2011.6186360

Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure. / Huang, Pei Hsuan; Wang, Hsun Wen; Tsai, Min An et al.
Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 2071-2073 6186360 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure

AU - Huang, Pei Hsuan

AU - Wang, Hsun Wen

AU - Tsai, Min An

AU - Lai, Fang I.

AU - Kuo, Shou Yi

AU - Kuo, H. C.

AU - Chi, Sien

PY - 2011

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N2 - In this study, we design the InGaP/GaAs/Ge triple-junction solar cells by optimizing short-circuit current matching between top and middle cells using Crosslight APSYS software. The base thickness of top InGaP cell is optimized at 0.36 um and the base thickness of middle GaAs cell is optimized at 3.2 um under AM1.5G illumination. For the optimized solar cell with nanorod arrays surface texture structure, the maximum I sc is 13.512 mA/cm 2, the open-circuit voltage (V oc) is 2.614 V, and the conversion efficiency (η) is 30.686 %. The enhancement of the I sc and the efficiency were 13.68 % and 12.24 %.

AB - In this study, we design the InGaP/GaAs/Ge triple-junction solar cells by optimizing short-circuit current matching between top and middle cells using Crosslight APSYS software. The base thickness of top InGaP cell is optimized at 0.36 um and the base thickness of middle GaAs cell is optimized at 3.2 um under AM1.5G illumination. For the optimized solar cell with nanorod arrays surface texture structure, the maximum I sc is 13.512 mA/cm 2, the open-circuit voltage (V oc) is 2.614 V, and the conversion efficiency (η) is 30.686 %. The enhancement of the I sc and the efficiency were 13.68 % and 12.24 %.

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DO - 10.1109/PVSC.2011.6186360

M3 - 会议稿件

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T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

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BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

Y2 - 19 June 2011 through 24 June 2011

ER -

Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure

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