Oxygen and hydrogen implanted oxidation enhancement of Al0.98Ga0.02As/Al0.7Ga0.3As distributed Bragg reflector structure

Ping Yu Kuei*, Liann Be Chang, Ming Jer Jeng, Li Zen Hsieh, Li Hsin Kuo

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Abstract

This study investigates the lateral oxidation enhancement of Al0.98Ga0.02As/Al0.7Ga0.3As distributed Bragg reflector (DBR) structure layers implanted with either oxygen or hydrogen ions. The results revealed that the lateral oxidation rate of Al0.98Ga0.02As/Al0.7Ga0.3As DBR layers with oxygen-implantation was higher than that in the case without oxygen-implantation, but hydrogen implantation in Al0.98Ga0.02As/Al0.7Ga0.3As DBR layers did not lead to an oxidation enhancement phenomenon. A high oxidation rate can shorten the oxidation time or lower the oxidation temperature, and thus would aid in increasing DBR performance and reliability.

Original languageEnglish
Pages (from-to)7355-7356
Number of pages2
JournalJapanese Journal of Applied Physics
Volume41
Issue number12
DOIs
StatePublished - 12 2002
Externally publishedYes

Keywords

  • AlGaAs
  • DBR
  • Lateral oxidation
  • Light output
  • Reliability

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