Oxygen and hydrogen implanted oxidation enhancement of Al0.98Ga0.02As/Al0.7Ga0.3As distributed Bragg reflector structure

Ping Yu Kuei; Liann Be Chang; Ming Jer Jeng; Li Zen Hsieh; Li Hsin Kuo

doi:10.1143/jjap.41.7355

Oxygen and hydrogen implanted oxidation enhancement of Al_0.98Ga_0.02As/Al_0.7Ga_0.3As distributed Bragg reflector structure

Ping Yu Kuei^*
, Liann Be Chang
, Ming Jer Jeng
, Li Zen Hsieh
, Li Hsin Kuo

^*Corresponding author for this work

National Defense University Taiwan
St. John's University Taiwan
Uni Light Technology Inc.

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

This study investigates the lateral oxidation enhancement of Al_0.98Ga_0.02As/Al_0.7Ga_0.3As distributed Bragg reflector (DBR) structure layers implanted with either oxygen or hydrogen ions. The results revealed that the lateral oxidation rate of Al_0.98Ga_0.02As/Al_0.7Ga_0.3As DBR layers with oxygen-implantation was higher than that in the case without oxygen-implantation, but hydrogen implantation in Al_0.98Ga_0.02As/Al_0.7Ga_0.3As DBR layers did not lead to an oxidation enhancement phenomenon. A high oxidation rate can shorten the oxidation time or lower the oxidation temperature, and thus would aid in increasing DBR performance and reliability.

Original language	English
Pages (from-to)	7355-7356
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	41
Issue number	12
DOIs	https://doi.org/10.1143/jjap.41.7355
State	Published - 12 2002
Externally published	Yes

Keywords

AlGaAs
DBR
Lateral oxidation
Light output
Reliability

Access to Document

10.1143/jjap.41.7355

Cite this

@article{e3f93a23c455415da8002a34c476fd76,

title = "Oxygen and hydrogen implanted oxidation enhancement of Al0.98Ga0.02As/Al0.7Ga0.3As distributed Bragg reflector structure",

abstract = "This study investigates the lateral oxidation enhancement of Al0.98Ga0.02As/Al0.7Ga0.3As distributed Bragg reflector (DBR) structure layers implanted with either oxygen or hydrogen ions. The results revealed that the lateral oxidation rate of Al0.98Ga0.02As/Al0.7Ga0.3As DBR layers with oxygen-implantation was higher than that in the case without oxygen-implantation, but hydrogen implantation in Al0.98Ga0.02As/Al0.7Ga0.3As DBR layers did not lead to an oxidation enhancement phenomenon. A high oxidation rate can shorten the oxidation time or lower the oxidation temperature, and thus would aid in increasing DBR performance and reliability.",

keywords = "AlGaAs, DBR, Lateral oxidation, Light output, Reliability",

author = "Kuei, \{Ping Yu\} and Chang, \{Liann Be\} and Jeng, \{Ming Jer\} and Hsieh, \{Li Zen\} and Kuo, \{Li Hsin\}",

year = "2002",

month = dec,

doi = "10.1143/jjap.41.7355",

language = "英语",

volume = "41",

pages = "7355--7356",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Oxygen and hydrogen implanted oxidation enhancement of Al0.98Ga0.02As/Al0.7Ga0.3As distributed Bragg reflector structure

AU - Kuei, Ping Yu

AU - Chang, Liann Be

AU - Jeng, Ming Jer

AU - Hsieh, Li Zen

AU - Kuo, Li Hsin

PY - 2002/12

Y1 - 2002/12

N2 - This study investigates the lateral oxidation enhancement of Al0.98Ga0.02As/Al0.7Ga0.3As distributed Bragg reflector (DBR) structure layers implanted with either oxygen or hydrogen ions. The results revealed that the lateral oxidation rate of Al0.98Ga0.02As/Al0.7Ga0.3As DBR layers with oxygen-implantation was higher than that in the case without oxygen-implantation, but hydrogen implantation in Al0.98Ga0.02As/Al0.7Ga0.3As DBR layers did not lead to an oxidation enhancement phenomenon. A high oxidation rate can shorten the oxidation time or lower the oxidation temperature, and thus would aid in increasing DBR performance and reliability.

AB - This study investigates the lateral oxidation enhancement of Al0.98Ga0.02As/Al0.7Ga0.3As distributed Bragg reflector (DBR) structure layers implanted with either oxygen or hydrogen ions. The results revealed that the lateral oxidation rate of Al0.98Ga0.02As/Al0.7Ga0.3As DBR layers with oxygen-implantation was higher than that in the case without oxygen-implantation, but hydrogen implantation in Al0.98Ga0.02As/Al0.7Ga0.3As DBR layers did not lead to an oxidation enhancement phenomenon. A high oxidation rate can shorten the oxidation time or lower the oxidation temperature, and thus would aid in increasing DBR performance and reliability.

KW - AlGaAs

KW - DBR

KW - Lateral oxidation

KW - Light output

KW - Reliability

UR - https://www.scopus.com/pages/publications/0036991670

U2 - 10.1143/jjap.41.7355

DO - 10.1143/jjap.41.7355

M3 - 文章

AN - SCOPUS:0036991670

SN - 0021-4922

VL - 41

SP - 7355

EP - 7356

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12

ER -

Oxygen and hydrogen implanted oxidation enhancement of Al_0.98Ga_0.02As/Al_0.7Ga_0.3As distributed Bragg reflector structure

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this