Oxygen pressure induced the electrical properties of amorphous LaAlO3 dielectric deposited by pulsed laser deposition at room temperature

Suhendro Purbo Prakoso; Wen Sheng Feng; Kou Chen Liu

doi:10.1109/IPFA.2015.7224404

Oxygen pressure induced the electrical properties of amorphous LaAlO₃ dielectric deposited by pulsed laser deposition at room temperature

Suhendro Purbo Prakoso, Wen Sheng Feng, Kou Chen Liu

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The amorphous LaAlO₃ (LAO) thin films were prepared with different oxygen flow rate using pulsed laser deposition (PLD) at room temperature and without additional thermal treatment. The Al/LAO/ITO MIM capacitor stacks were deployed to test the variation of its electrical characteristics in conjunction with atomic force microscopy (AFM), Alpha-step profiler, x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), and tunneling electron microscopy (TEM) measurements. In this study, the leakage current and capacitance density of up to 10^-9 A/cm² and 71.5 nF/cm², respectively, were achieved with optimum oxygen pressures.

Original language	English
Title of host publication	Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	350-353
Number of pages	4
ISBN (Electronic)	9781479999286, 9781479999286
DOIs	https://doi.org/10.1109/IPFA.2015.7224404
State	Published - 25 08 2015
Event	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan Duration: 29 06 2015 → 02 07 2015

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2015-August

Conference

Conference	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Country/Territory	Taiwan
City	Hsinchu
Period	29/06/15 → 02/07/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Access to Document

10.1109/IPFA.2015.7224404

Cite this

Prakoso, S. P., Feng, W. S., & Liu, K. C. (2015). Oxygen pressure induced the electrical properties of amorphous LaAlO₃ dielectric deposited by pulsed laser deposition at room temperature. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 (pp. 350-353). Article 7224404 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2015.7224404

Prakoso, Suhendro Purbo ; Feng, Wen Sheng ; Liu, Kou Chen. / Oxygen pressure induced the electrical properties of amorphous LaAlO₃ dielectric deposited by pulsed laser deposition at room temperature. Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 350-353 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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abstract = "The amorphous LaAlO3 (LAO) thin films were prepared with different oxygen flow rate using pulsed laser deposition (PLD) at room temperature and without additional thermal treatment. The Al/LAO/ITO MIM capacitor stacks were deployed to test the variation of its electrical characteristics in conjunction with atomic force microscopy (AFM), Alpha-step profiler, x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), and tunneling electron microscopy (TEM) measurements. In this study, the leakage current and capacitance density of up to 10-9 A/cm2 and 71.5 nF/cm2, respectively, were achieved with optimum oxygen pressures.",

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Prakoso, SP, Feng, WS & Liu, KC 2015, Oxygen pressure induced the electrical properties of amorphous LaAlO₃ dielectric deposited by pulsed laser deposition at room temperature. in Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015., 7224404, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 350-353, 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015, Hsinchu, Taiwan, 29/06/15. https://doi.org/10.1109/IPFA.2015.7224404

Oxygen pressure induced the electrical properties of amorphous LaAlO₃ dielectric deposited by pulsed laser deposition at room temperature. / Prakoso, Suhendro Purbo; Feng, Wen Sheng; Liu, Kou Chen.
Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 350-353 7224404 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Prakoso SP, Feng WS, Liu KC. Oxygen pressure induced the electrical properties of amorphous LaAlO₃ dielectric deposited by pulsed laser deposition at room temperature. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 350-353. 7224404. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2015.7224404