P-I-N amorphous silicon light-addressable potentiometric sensors for high-photovoltage chemical image

Chia Ming Yang; Yuan Hui Liao; Chun Hui Chen; Cong Cheng Chen; Chao Sung Lai

doi:10.1016/j.proeng.2015.08.686

P-I-N amorphous silicon light-addressable potentiometric sensors for high-photovoltage chemical image

Chia Ming Yang^*, Yuan Hui Liao, Chun Hui Chen, Cong Cheng Chen, Chao Sung Lai

^*Corresponding author for this work

Chang Gung University

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

For higher photo signal of chemical image sensor, a new device structure of P-I-N amorphous silicon (a-Si) on ITO/glass is first applied in light-addressable potentiometric sensor (LAPS). Niobium oxide (NbO_x) is used as pH sensing membrane. All processes of device are lower than 300oC, which are suitable for glass substrate. Based on photovoltage versus gate bias characteristics, calculated pH sensitivity and linearity between pH 2 to 10 is 40 mV/pH and 99.4%, respectively. Compare to conventional intrinsic amorphous silicon structure, improvement on photocurrent, and spatial resolution are 50% and 15%, respectively. In the meantime, higher frequency of ac signal of laser up to 20 kHz could be used for high speed scanning by means of red laser and analog micromirror scanning system.

Original language	English
Pages (from-to)	1015-1018
Number of pages	4
Journal	Procedia Engineering
Volume	120
DOIs	https://doi.org/10.1016/j.proeng.2015.08.686
State	Published - 2015
Event	29th European Conference on Solid-State Transducers, EUROSENSORS 2015; Freiburg; Germany; 6 September 2015 through 9 September 2015. - Freiburg, Germany Duration: 06 09 2015 → 09 09 2015

Bibliographical note

Publisher Copyright:
© 2015 The Authors. Published by Elsevier Ltd.

Keywords

Amorphous silicon
LAPS
PIN
Photovoltage

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10.1016/j.proeng.2015.08.686

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title = "P-I-N amorphous silicon light-addressable potentiometric sensors for high-photovoltage chemical image",

abstract = "For higher photo signal of chemical image sensor, a new device structure of P-I-N amorphous silicon (a-Si) on ITO/glass is first applied in light-addressable potentiometric sensor (LAPS). Niobium oxide (NbOx) is used as pH sensing membrane. All processes of device are lower than 300oC, which are suitable for glass substrate. Based on photovoltage versus gate bias characteristics, calculated pH sensitivity and linearity between pH 2 to 10 is 40 mV/pH and 99.4%, respectively. Compare to conventional intrinsic amorphous silicon structure, improvement on photocurrent, and spatial resolution are 50% and 15%, respectively. In the meantime, higher frequency of ac signal of laser up to 20 kHz could be used for high speed scanning by means of red laser and analog micromirror scanning system.",

keywords = "Amorphous silicon, LAPS, PIN, Photovoltage",

author = "Yang, {Chia Ming} and Liao, {Yuan Hui} and Chen, {Chun Hui} and Chen, {Cong Cheng} and Lai, {Chao Sung}",

note = "Publisher Copyright: {\textcopyright} 2015 The Authors. Published by Elsevier Ltd.; 29th European Conference on Solid-State Transducers, EUROSENSORS 2015; Freiburg; Germany; 6 September 2015 through 9 September 2015. ; Conference date: 06-09-2015 Through 09-09-2015",

year = "2015",

doi = "10.1016/j.proeng.2015.08.686",

language = "英语",

volume = "120",

pages = "1015--1018",

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T1 - P-I-N amorphous silicon light-addressable potentiometric sensors for high-photovoltage chemical image

AU - Yang, Chia Ming

AU - Liao, Yuan Hui

AU - Chen, Chun Hui

AU - Chen, Cong Cheng

AU - Lai, Chao Sung

PY - 2015

Y1 - 2015

N2 - For higher photo signal of chemical image sensor, a new device structure of P-I-N amorphous silicon (a-Si) on ITO/glass is first applied in light-addressable potentiometric sensor (LAPS). Niobium oxide (NbOx) is used as pH sensing membrane. All processes of device are lower than 300oC, which are suitable for glass substrate. Based on photovoltage versus gate bias characteristics, calculated pH sensitivity and linearity between pH 2 to 10 is 40 mV/pH and 99.4%, respectively. Compare to conventional intrinsic amorphous silicon structure, improvement on photocurrent, and spatial resolution are 50% and 15%, respectively. In the meantime, higher frequency of ac signal of laser up to 20 kHz could be used for high speed scanning by means of red laser and analog micromirror scanning system.

AB - For higher photo signal of chemical image sensor, a new device structure of P-I-N amorphous silicon (a-Si) on ITO/glass is first applied in light-addressable potentiometric sensor (LAPS). Niobium oxide (NbOx) is used as pH sensing membrane. All processes of device are lower than 300oC, which are suitable for glass substrate. Based on photovoltage versus gate bias characteristics, calculated pH sensitivity and linearity between pH 2 to 10 is 40 mV/pH and 99.4%, respectively. Compare to conventional intrinsic amorphous silicon structure, improvement on photocurrent, and spatial resolution are 50% and 15%, respectively. In the meantime, higher frequency of ac signal of laser up to 20 kHz could be used for high speed scanning by means of red laser and analog micromirror scanning system.

KW - Amorphous silicon

KW - LAPS

KW - PIN

KW - Photovoltage

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DO - 10.1016/j.proeng.2015.08.686

M3 - 会议文章

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T2 - 29th European Conference on Solid-State Transducers, EUROSENSORS 2015; Freiburg; Germany; 6 September 2015 through 9 September 2015.

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ER -

P-I-N amorphous silicon light-addressable potentiometric sensors for high-photovoltage chemical image

Abstract

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Keywords

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