P-type conductivity of MgZnO:(N:Ga) Thin films prepared by remote plasma in-situ atomic layer doping

Remote plasma in-situ atomic layer doping technique was used to tailor the p-type conductivity of nitrogen and gallium co-doped MgZnO thin films. The nitrogen doping into ZnO converts the conductivity from n-type to p-type, deduced from the formation of nitrogen-related acceptors. The hole concentration increases with the incorporation of gallium, ascribed to the stabilized substitution of nitrogen at appropriate lattice sites. The stability of p-type conductivity was further improved by incorporating Mg due to the increase in solubility of nitrogen-related acceptors. Secondary ion mass spectrometry indicates the post-deposition annealing results in the removal of hydrogen, also enhancing the p-type conductivity.