Package-strain-enhanced device and circuit performance

S. Maikap; M. H. Liao; F. Yuan; M. H. Lee; C. F. Huang; S. T. Chang; C. W. Liu

doi:10.1109/IEDM.2004.1419117

Package-strain-enhanced device and circuit performance

S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C. F. Huang, S. T. Chang, C. W. Liu^*

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

21 Scopus citations

Abstract

The hole mobility enhancement can be as high as -18% for SiO2 and ∼20% for high-κ HfO2 gate stack dielectrics with the uniaxial compressive strain (0.2%) parallel to the channel. The highest drain current of -22% at saturation and ∼30% at linear region is observed for the bulk Si PMOS with high-K gate stacks. The drain current and hole mobility of bulk Si PMOS are degraded under the small biaxial tensile strain, while substrate-strained Si device shows opposite. The nonoptimized ring oscillator has the speed enhancement of ∼7% under the uniaxial tensile strain parallel to NMOS channel. Proper package strain also gives the drive-current as well as mobility enhancement at 100°C.

Original language	English
Pages (from-to)	233-236
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2004.1419117
State	Published - 2004
Externally published	Yes
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 13 12 2004 → 15 12 2004

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Publisher Copyright:
© 2004 IEEE.

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10.1109/IEDM.2004.1419117

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@article{52801e8fa9d34d87899c97c3dae690c4,

title = "Package-strain-enhanced device and circuit performance",

abstract = "The hole mobility enhancement can be as high as -18% for SiO2 and ∼20% for high-κ HfO2 gate stack dielectrics with the uniaxial compressive strain (0.2%) parallel to the channel. The highest drain current of -22% at saturation and ∼30% at linear region is observed for the bulk Si PMOS with high-K gate stacks. The drain current and hole mobility of bulk Si PMOS are degraded under the small biaxial tensile strain, while substrate-strained Si device shows opposite. The nonoptimized ring oscillator has the speed enhancement of ∼7% under the uniaxial tensile strain parallel to NMOS channel. Proper package strain also gives the drive-current as well as mobility enhancement at 100°C.",

author = "S. Maikap and Liao, {M. H.} and F. Yuan and Lee, {M. H.} and Huang, {C. F.} and Chang, {S. T.} and Liu, {C. W.}",

note = "Publisher Copyright: {\textcopyright} 2004 IEEE.; IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

year = "2004",

doi = "10.1109/IEDM.2004.1419117",

language = "英语",

pages = "233--236",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Package-strain-enhanced device and circuit performance

AU - Maikap, S.

AU - Liao, M. H.

AU - Yuan, F.

AU - Lee, M. H.

AU - Huang, C. F.

AU - Chang, S. T.

AU - Liu, C. W.

PY - 2004

Y1 - 2004

N2 - The hole mobility enhancement can be as high as -18% for SiO2 and ∼20% for high-κ HfO2 gate stack dielectrics with the uniaxial compressive strain (0.2%) parallel to the channel. The highest drain current of -22% at saturation and ∼30% at linear region is observed for the bulk Si PMOS with high-K gate stacks. The drain current and hole mobility of bulk Si PMOS are degraded under the small biaxial tensile strain, while substrate-strained Si device shows opposite. The nonoptimized ring oscillator has the speed enhancement of ∼7% under the uniaxial tensile strain parallel to NMOS channel. Proper package strain also gives the drive-current as well as mobility enhancement at 100°C.

AB - The hole mobility enhancement can be as high as -18% for SiO2 and ∼20% for high-κ HfO2 gate stack dielectrics with the uniaxial compressive strain (0.2%) parallel to the channel. The highest drain current of -22% at saturation and ∼30% at linear region is observed for the bulk Si PMOS with high-K gate stacks. The drain current and hole mobility of bulk Si PMOS are degraded under the small biaxial tensile strain, while substrate-strained Si device shows opposite. The nonoptimized ring oscillator has the speed enhancement of ∼7% under the uniaxial tensile strain parallel to NMOS channel. Proper package strain also gives the drive-current as well as mobility enhancement at 100°C.

UR - http://www.scopus.com/inward/record.url?scp=21644463595&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2004.1419117

DO - 10.1109/IEDM.2004.1419117

M3 - 会议文章

AN - SCOPUS:21644463595

SN - 0163-1918

SP - 233

EP - 236

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

Package-strain-enhanced device and circuit performance

Abstract

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