Palladium diffusion transport in n-type GaAs

Der Hwa Yeh*, Li Zen Hsieh, Liann Be Chang, Ming Jer Jeng, Ping Yu Kuei

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Abstract

The aim of this study is to determine the diffusion coefficient of palladium (Pd) in gallium arsenide under different annealing conditions. The extent of diffusion was characterized using the secondary ion mass spectrometry (SIMS) technique. The temperature-dependent diffusion coefficients of Pd are 8.4 × 10-13, 2.25 × 10-12, and 9.51 × 10-12 cm2/s, respectively, at temperatures of 400,550, and 850°C. The Pd diffusion constant and activation energy in GaAs are calculated as 3.54 × 10-10 cm2/s and 0.35 eV, respectively. This indicates that the major diffusion mechanism of Pd in GaAs is interstitial diffusion.

Original languageEnglish
Pages (from-to)968-970
Number of pages3
JournalJapanese Journal of Applied Physics
Volume46
Issue number3 A
DOIs
StatePublished - 08 03 2007
Externally publishedYes

Keywords

  • Diffusion coefficient
  • GaAs
  • Palladium (Pd)
  • SIMS

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