Abstract
The aim of this study is to determine the diffusion coefficient of palladium (Pd) in gallium arsenide under different annealing conditions. The extent of diffusion was characterized using the secondary ion mass spectrometry (SIMS) technique. The temperature-dependent diffusion coefficients of Pd are 8.4 × 10-13, 2.25 × 10-12, and 9.51 × 10-12 cm2/s, respectively, at temperatures of 400,550, and 850°C. The Pd diffusion constant and activation energy in GaAs are calculated as 3.54 × 10-10 cm2/s and 0.35 eV, respectively. This indicates that the major diffusion mechanism of Pd in GaAs is interstitial diffusion.
Original language | English |
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Pages (from-to) | 968-970 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics |
Volume | 46 |
Issue number | 3 A |
DOIs | |
State | Published - 08 03 2007 |
Externally published | Yes |
Keywords
- Diffusion coefficient
- GaAs
- Palladium (Pd)
- SIMS