Parametric and numerical study on the diffusion in a metalized amorphous binary alloys film

Chuan Li; J. H. Hsieh; Z. Z. Tang; Jui Ching Cheng

doi:10.1016/j.tsf.2009.03.144

Parametric and numerical study on the diffusion in a metalized amorphous binary alloys film

Chuan Li^*
, J. H. Hsieh
, Z. Z. Tang
, Jui Ching Cheng

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

3 Scopus citations

Abstract

An amorphous Ta-Zr diffusion barrier was studied under the Cu metallization. A stack of Cu/Ta₅₀Zr₅₀/Si with a 50 nm amorphous film fabricated by co-sputtering was found to fail when annealed up to 650 °C, which is much lower than the crystallization temperature (800 °C) of the amorphous Ta₅₀Zr₅₀ film. Besides, results show that the existence of Cu layer can induce the formation of three metal silicides, namely TaSi₂, ZrSi₂ and Cu₃Si almost all at 650 °C. A mechanism for the failure of barrier film is proposed based on the change of activation energy for diffusion by the metallization-induced tensile stresses during annealing.

Original language	English
Pages (from-to)	5087-5091
Number of pages	5
Journal	Thin Solid Films
Volume	517
Issue number	17
DOIs	https://doi.org/10.1016/j.tsf.2009.03.144
State	Published - 01 07 2009

Keywords

Activation energy
Amorphous diffusion barrier
Crystallization temperature atomic volume
Ta-Zr film

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10.1016/j.tsf.2009.03.144

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title = "Parametric and numerical study on the diffusion in a metalized amorphous binary alloys film",

abstract = "An amorphous Ta-Zr diffusion barrier was studied under the Cu metallization. A stack of Cu/Ta50Zr50/Si with a 50 nm amorphous film fabricated by co-sputtering was found to fail when annealed up to 650 °C, which is much lower than the crystallization temperature (800 °C) of the amorphous Ta50Zr50 film. Besides, results show that the existence of Cu layer can induce the formation of three metal silicides, namely TaSi2, ZrSi2 and Cu3Si almost all at 650 °C. A mechanism for the failure of barrier film is proposed based on the change of activation energy for diffusion by the metallization-induced tensile stresses during annealing.",

keywords = "Activation energy, Amorphous diffusion barrier, Crystallization temperature atomic volume, Ta-Zr film",

author = "Chuan Li and Hsieh, \{J. H.\} and Tang, \{Z. Z.\} and Cheng, \{Jui Ching\}",

year = "2009",

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doi = "10.1016/j.tsf.2009.03.144",

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volume = "517",

pages = "5087--5091",

journal = "Thin Solid Films",

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publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Parametric and numerical study on the diffusion in a metalized amorphous binary alloys film

AU - Li, Chuan

AU - Hsieh, J. H.

AU - Tang, Z. Z.

AU - Cheng, Jui Ching

PY - 2009/7/1

Y1 - 2009/7/1

N2 - An amorphous Ta-Zr diffusion barrier was studied under the Cu metallization. A stack of Cu/Ta50Zr50/Si with a 50 nm amorphous film fabricated by co-sputtering was found to fail when annealed up to 650 °C, which is much lower than the crystallization temperature (800 °C) of the amorphous Ta50Zr50 film. Besides, results show that the existence of Cu layer can induce the formation of three metal silicides, namely TaSi2, ZrSi2 and Cu3Si almost all at 650 °C. A mechanism for the failure of barrier film is proposed based on the change of activation energy for diffusion by the metallization-induced tensile stresses during annealing.

AB - An amorphous Ta-Zr diffusion barrier was studied under the Cu metallization. A stack of Cu/Ta50Zr50/Si with a 50 nm amorphous film fabricated by co-sputtering was found to fail when annealed up to 650 °C, which is much lower than the crystallization temperature (800 °C) of the amorphous Ta50Zr50 film. Besides, results show that the existence of Cu layer can induce the formation of three metal silicides, namely TaSi2, ZrSi2 and Cu3Si almost all at 650 °C. A mechanism for the failure of barrier film is proposed based on the change of activation energy for diffusion by the metallization-induced tensile stresses during annealing.

KW - Activation energy

KW - Amorphous diffusion barrier

KW - Crystallization temperature atomic volume

KW - Ta-Zr film

UR - https://www.scopus.com/pages/publications/65749092952

U2 - 10.1016/j.tsf.2009.03.144

DO - 10.1016/j.tsf.2009.03.144

M3 - 文章

AN - SCOPUS:65749092952

SN - 0040-6090

VL - 517

SP - 5087

EP - 5091

JO - Thin Solid Films

JF - Thin Solid Films

IS - 17

ER -

Parametric and numerical study on the diffusion in a metalized amorphous binary alloys film

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Keywords

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