Passivation of yellow luminescence defects in GaN film by annealing and CF₄ plasma treatment

In this study, we demonstrated that yellow luminescence (YL) defects can be mitigated with proper annealing or CF₄ plasma treatment. Multiple material analyses, including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and surface roughness measurements were performed to investigate improvements in GaN film material properties caused by annealing and CF₄ plasma treatment. Filling vacancies during the annealing process and incorporating fluorine atoms to bond with dangling bonds during the plasma treatment process may lessen YL defects and decrease YL luminescence.