Peculiar diffusion of C60 on In-adsorbed Si(111)√3 × √3-Au surface

A. V. Matetskiy, L. V. Bondarenko, D. V. Gruznev, A. V. Zotov, A. A. Saranin*, J. P. Chou, C. R. Hsing, C. M. Wei, Y. L. Wang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

11 Scopus citations

Abstract

In-accumulated Si(111)√3 × √3-Au surface represents a highly-ordered homogeneous Au/Si(111) reconstruction with a two-dimensional gas of In adatoms on it. Regularities of C60 migration on this surface have been elucidated through analysis of C60 island density as a function of growth temperature and deposition rate in the framework of the rate equation theory and simulation of C60 migration using density-functional-theory calculations. The critical cluster size has been found to be i = 1 for the whole temperature range studied, from 110 to 240 K, while activation energy for C60 diffusion varies from (99 ± 18) meV at 110 ÷ 140 K to (370 ± 24) meV at 160 ÷ 240 K. This finding has been accounted to the peculiarity of C60 migration in a labyrinth built of In adatoms on the Si(111)√3 × √3-Au surface, namely, at low temperatures C60 migration is confined within the labyrinth channels, while at high temperatures C60 molecules possess enough thermal energy to surmount the labyrinth walls.

Original languageEnglish
Pages (from-to)44-50
Number of pages7
JournalSurface Science
Volume616
DOIs
StatePublished - 10 2013
Externally publishedYes

Keywords

  • Atom-solid interactions
  • First-principle calculations
  • Fullerene
  • Scanning tunneling microscopy
  • Silicon
  • Surface diffusion

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