Performance enhancement for strained HfCO2 nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement

  • Woei Cherng Wu*
  • , Tien Sheng Chao
  • , Te Hsin Chiu
  • , Jer Chyi Wang
  • , Chao Sung Lai
  • , Ma Ming-Wen
  • , Wen Cheng Lo
  • , Yi Hsun Ho
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Fingerprint

Dive into the research topics of 'Performance enhancement for strained HfCO2 nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement'. Together they form a unique fingerprint.

Material Science