Performance Improvement of Gadolinium Oxide Resistive Random Access Memory Treated by Hydrogen Plasma Immersion Ion Implantation

Research output: Contribution to conferenceProceeding

Original languageAmerican English
StatePublished - 2013
EventThe 12th International Symposium on Sputtering & Plasma Processes (ISSP2013) - Kyoto, Japan
Duration: 10 07 201312 07 2013

Conference

ConferenceThe 12th International Symposium on Sputtering & Plasma Processes (ISSP2013)
Period10/07/1312/07/13

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