Performance of high-reliability and high-linearity InGaP/GaAs HBT PAs for wireless communication

Min Chang Tu*, Herng Yih Ueng, Yu Chi Wang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

24 Scopus citations


An InGaP heterojunction-bipolar-transistor (HBT) power amplifier with the best linearity and high reliability is presented in this paper for use in wireless digital mobile communication systems. We optimized the linearity of a novel HBT device and investigated its reliability. Using SILVACO software, we performed a simulation of the HBT device. The best linearity, which was revealed for the device with a capacitance ratio Cbc (0/6 V), is 1.25 at a BVceo of 22 V. After the device was fabricated, a reasonably high PAE, i.e., ∼55%, was obtained at 2.0 GHz, and an adjacent channel power ratio of over -48 dBc was achieved. In the reliability testing, the device, which was stressed at Vce = 3 V and JC = 25 kA/cm 2 under 85 °C ambient temperature and 85% humidity, showed no failure for more than 1100 h. No significant beta degradation was observed under an extreme current JC = 200 kA/cm2 stress under wafer-level electrical/thermal overstress tests.

Original languageEnglish
Article number5345815
Pages (from-to)188-194
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number1
StatePublished - 01 2010
Externally publishedYes


  • Adjacent channel power ratio (ACPR)
  • Collectorbase capacitance
  • Epitaxial
  • Heterojunction bipolar transistor (HBT)


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