Performance optimizing on multi-function MMIC design

M. C. Tu; Y. C. Wang; H. Y. Ueng

doi:10.1016/j.mee.2009.02.022

Performance optimizing on multi-function MMIC design

M. C. Tu
, Y. C. Wang
, H. Y. Ueng^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

Integration of GaAs BiFET (bipolar-FET) devices to obtain the optimum performance for multiple functions of MMIC design has been achieved. In this study, heterojunction bipolar transistors (HBTs), enhancement mode pseudomorphic HEMTs (E-pHEMTs), and depletion mode pHEMTs are developed for potential applications, including the integration of HBT power amplifier circuitry with pHEMT-based bias control, logic, RF switch, and low-noise amplifier circuitries. Critical processes including gate photolithography and gate recess control are presented and discussed in detail. The enhancement-depletion modes of pHEMT, HBT electrical performance, and uniformity are investigated comprehensively. In addition, power amplifiers and high power switches based on BiFET technology are investigated.

Original language	English
Pages (from-to)	2114-2118
Number of pages	5
Journal	Microelectronic Engineering
Volume	86
Issue number	10
DOIs	https://doi.org/10.1016/j.mee.2009.02.022
State	Published - 10 2009
Externally published	Yes

Keywords

Enhancement-mode pHEMT
GaAs
HBT
pHEMT

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10.1016/j.mee.2009.02.022

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title = "Performance optimizing on multi-function MMIC design",

abstract = "Integration of GaAs BiFET (bipolar-FET) devices to obtain the optimum performance for multiple functions of MMIC design has been achieved. In this study, heterojunction bipolar transistors (HBTs), enhancement mode pseudomorphic HEMTs (E-pHEMTs), and depletion mode pHEMTs are developed for potential applications, including the integration of HBT power amplifier circuitry with pHEMT-based bias control, logic, RF switch, and low-noise amplifier circuitries. Critical processes including gate photolithography and gate recess control are presented and discussed in detail. The enhancement-depletion modes of pHEMT, HBT electrical performance, and uniformity are investigated comprehensively. In addition, power amplifiers and high power switches based on BiFET technology are investigated.",

keywords = "Enhancement-mode pHEMT, GaAs, HBT, pHEMT",

author = "Tu, \{M. C.\} and Wang, \{Y. C.\} and Ueng, \{H. Y.\}",

year = "2009",

month = oct,

doi = "10.1016/j.mee.2009.02.022",

language = "英语",

volume = "86",

pages = "2114--2118",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Performance optimizing on multi-function MMIC design

AU - Tu, M. C.

AU - Wang, Y. C.

AU - Ueng, H. Y.

PY - 2009/10

Y1 - 2009/10

N2 - Integration of GaAs BiFET (bipolar-FET) devices to obtain the optimum performance for multiple functions of MMIC design has been achieved. In this study, heterojunction bipolar transistors (HBTs), enhancement mode pseudomorphic HEMTs (E-pHEMTs), and depletion mode pHEMTs are developed for potential applications, including the integration of HBT power amplifier circuitry with pHEMT-based bias control, logic, RF switch, and low-noise amplifier circuitries. Critical processes including gate photolithography and gate recess control are presented and discussed in detail. The enhancement-depletion modes of pHEMT, HBT electrical performance, and uniformity are investigated comprehensively. In addition, power amplifiers and high power switches based on BiFET technology are investigated.

AB - Integration of GaAs BiFET (bipolar-FET) devices to obtain the optimum performance for multiple functions of MMIC design has been achieved. In this study, heterojunction bipolar transistors (HBTs), enhancement mode pseudomorphic HEMTs (E-pHEMTs), and depletion mode pHEMTs are developed for potential applications, including the integration of HBT power amplifier circuitry with pHEMT-based bias control, logic, RF switch, and low-noise amplifier circuitries. Critical processes including gate photolithography and gate recess control are presented and discussed in detail. The enhancement-depletion modes of pHEMT, HBT electrical performance, and uniformity are investigated comprehensively. In addition, power amplifiers and high power switches based on BiFET technology are investigated.

KW - Enhancement-mode pHEMT

KW - GaAs

KW - HBT

KW - pHEMT

UR - https://www.scopus.com/pages/publications/67649983829

U2 - 10.1016/j.mee.2009.02.022

DO - 10.1016/j.mee.2009.02.022

M3 - 文章

AN - SCOPUS:67649983829

SN - 0167-9317

VL - 86

SP - 2114

EP - 2118

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 10

ER -

Performance optimizing on multi-function MMIC design

Abstract

Keywords

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