Performances of planar GaAs and InGaAs Schottky diodes fabricated by Pr2O3-added liquid phase epitaxy

Y. C. Cheng; Z. W. Hu; J. N. Yang; L. B. Chang; M. J. Jeng

doi:10.1016/S0167-9317(02)00884-5

Performances of planar GaAs and InGaAs Schottky diodes fabricated by Pr₂O₃-added liquid phase epitaxy

Y. C. Cheng^*, Z. W. Hu, J. N. Yang, L. B. Chang, M. J. Jeng

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

This work reports on the improved performance of planar GaAs and InGaAs Schottky diodes fabricated by rare element Pr related oxides Pr₂O₃-added liquid phase epitaxy. We verify that impurity concentrations are suppressed by two orders, and that electron mobility is significantly enhanced. With Pr₂O₃ added, the cutoff frequency of Schottky diodes increases in planar InGaAs but decreases in planar GaAs, because of higher contact resistance.

Original language	English
Pages (from-to)	223-229
Number of pages	7
Journal	Microelectronic Engineering
Volume	65
Issue number	1-2
DOIs	https://doi.org/10.1016/S0167-9317(02)00884-5
State	Published - 12 2002
Externally published	Yes

Keywords

GaAs
InGaAs
LPE
PrO
Schottky diode

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10.1016/S0167-9317(02)00884-5

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title = "Performances of planar GaAs and InGaAs Schottky diodes fabricated by Pr2O3-added liquid phase epitaxy",

abstract = "This work reports on the improved performance of planar GaAs and InGaAs Schottky diodes fabricated by rare element Pr related oxides Pr2O3-added liquid phase epitaxy. We verify that impurity concentrations are suppressed by two orders, and that electron mobility is significantly enhanced. With Pr2O3 added, the cutoff frequency of Schottky diodes increases in planar InGaAs but decreases in planar GaAs, because of higher contact resistance.",

keywords = "GaAs, InGaAs, LPE, PrO, Schottky diode",

author = "Cheng, {Y. C.} and Hu, {Z. W.} and Yang, {J. N.} and Chang, {L. B.} and Jeng, {M. J.}",

year = "2002",

month = dec,

doi = "10.1016/S0167-9317(02)00884-5",

language = "英语",

volume = "65",

pages = "223--229",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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TY - JOUR

T1 - Performances of planar GaAs and InGaAs Schottky diodes fabricated by Pr2O3-added liquid phase epitaxy

AU - Cheng, Y. C.

AU - Hu, Z. W.

AU - Yang, J. N.

AU - Chang, L. B.

AU - Jeng, M. J.

PY - 2002/12

Y1 - 2002/12

N2 - This work reports on the improved performance of planar GaAs and InGaAs Schottky diodes fabricated by rare element Pr related oxides Pr2O3-added liquid phase epitaxy. We verify that impurity concentrations are suppressed by two orders, and that electron mobility is significantly enhanced. With Pr2O3 added, the cutoff frequency of Schottky diodes increases in planar InGaAs but decreases in planar GaAs, because of higher contact resistance.

AB - This work reports on the improved performance of planar GaAs and InGaAs Schottky diodes fabricated by rare element Pr related oxides Pr2O3-added liquid phase epitaxy. We verify that impurity concentrations are suppressed by two orders, and that electron mobility is significantly enhanced. With Pr2O3 added, the cutoff frequency of Schottky diodes increases in planar InGaAs but decreases in planar GaAs, because of higher contact resistance.

KW - GaAs

KW - InGaAs

KW - LPE

KW - PrO

KW - Schottky diode

UR - http://www.scopus.com/inward/record.url?scp=0036891993&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(02)00884-5

DO - 10.1016/S0167-9317(02)00884-5

M3 - 文章

AN - SCOPUS:0036891993

SN - 0167-9317

VL - 65

SP - 223

EP - 229

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-2

ER -

Performances of planar GaAs and InGaAs Schottky diodes fabricated by Pr₂O₃-added liquid phase epitaxy

Abstract

Keywords

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