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PH sensing reliability of flexible ITO/PET electrodes on EGFETs prepared by a roll-to-roll process

  • Cheng En Lue
  • , I. Shun Wang
  • , Chi Hsien Huang
  • , Yu Ting Shiao
  • , Hau Cheng Wang
  • , Chia Ming Yang
  • , Shu Hao Hsu
  • , Ching Yu Chang
  • , William Wang
  • , Chao Sung Lai*
  • *Corresponding author for this work
  • Chang Gung University
  • Win Optical Technology CO. LTD.
  • Crystalvue Medical Corporation

Research output: Contribution to journalJournal Article peer-review

60 Scopus citations

Abstract

In this work, indium tin oxide (ITO) layers were deposited by radio frequency sputtering using a roll-to-roll process on flexible polyethylene terephthalate substrates as pH-sensing electrodes of extended gate field effect transistors (EGFETs). When the pH sensitivity of EGFETs for ITO layers with different sheet resistances was compared, a higher sensitivity was found for samples with a lower sheet resistance (100 Ω/□), and a reliability evaluation was carried out for this condition. The average sensitivity was 50.1 mV/pH, as measured from pH 2 to pH 12. Over three additional runs, the standard variation of the average sensitivity was found to be ±1.7 mV/pH. The tolerance to light is high; the samples were measured in dark and light conditions, and a difference of only 0.6 mV was observed. The temperatures available for measurement are 25-40°C. Up to this point, the behavior of samples stored in dry conditions has been found to persist for more than 55 days.

Original languageEnglish
Pages (from-to)1651-1654
Number of pages4
JournalMicroelectronics Reliability
Volume52
Issue number8
DOIs
StatePublished - 08 2012

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