PH-sensitive Gd2 O3 Si O2 stacked capacitors prepared by pure water anodic oxidation

A high dielectric constant capacitor with stacked Gd2 O3 Si O2 oxide prepared by anodic oxidation in pure water is reported in this study. The transmission electron microscopy results indicate that good uniform interfaces are observed. The relative dielectric constant of the anodic Gd2 O3 oxides is determined to have a value of about 12 by capacitance-voltage (C-V) measurement. High breakdown property and left-shift C-V curves are exhibited. This anodic oxidation Gd2 O3 Si O2 stacked capacitor, which is used as a pH-sensitive element in the structure of an electrolyte insulator semiconductor (EIS), is investigated. A large shift of the flatband voltage is obtained when the double-layered (Gd2 O3 Si O2) EIS structures are immersed in various (pH 2, 4, 6, 8, and 10) buffer solutions.