@inproceedings{9129e335dc8142d1be9631a3dc8b7ddb,
title = "PHEMT switch yield improvement through feedback from 100% die test",
abstract = "Yield improvement is an ongoing process in the MMIC production line. The gate lithography process will determine the major part of pHEMT wafer yield. This paper investigates yield improvement through feedback from automatic 100% DC and switching time on wafer testing. The breakdown and time domain test provides a reticle-dependent distribution pattern. This is photolithography process dependent and has been attributed to defocus during stepper exposure at gate level. Feeding this information back to the process engineers enables them to pinpoint the specific process step and improve the process yield.",
keywords = "Gate lag, Lithography, Transient time",
author = "Tu, {M. C.} and Paul Yeh and Liu, {S. M.} and Ueng, {H. Y.} and Chang, {W. D.}",
year = "2009",
language = "英语",
isbn = "189358013X",
series = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009",
booktitle = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009",
note = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009 ; Conference date: 18-05-2009 Through 21-05-2009",
}