Phonon-assisted auger recombination processes in InGaAs/GaAs single-quantum-well lasers

The Auger recombination processes for InGaAs/GaAs single-quantum-well semiconductor ridge lasers with various stripe widths have been systematically investigated. It was found that the Auger recombination temperature dependence is a function of laser stripe width. An Auger coefficient activation energy of 31.3 ± 5.1 meV characterized the phonon-assisted Auger processes. Above the crossover temperature, the nonradiative component was the major contributor to the operating current, while the radiative current was dominant below this temperature. Increases, not only in the crossover temperature but also in the differential quantum efficiency, were obtained with increasing stripe width. These findings should greatly aid in the better design and optimization of stripe-geometry lasers.