Phosphorus redistribution caused by electrical deactivation of phosphorus at low temperatures

Ruey Dar Chang*, Chih Hung Lin, Hong Lu, Zhimin Wan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Electrical deactivation of phosphorus was investigated using silicon-on-insulator (SOI) wafers with uniform phosphorus profiles prepared by ion implantation and annealing at high temperatures. Evident depletion of phosphorus was observed in the bulk region of the active silicon layer when electrical deactivation of phosphorus occurred at low temperatures. Such phenomenon was due to uphill diffusion of phosphorus toward the surface. Retrograde profiles of excess interstitials generated during deactivation were proposed to explain the redistribution of phosphorus.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
EditorsMulpuri V. Rao
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479952120
DOIs
StatePublished - 29 10 2014
Event20th International Conference on Ion Implantation Technology, IIT 2014 - Portland, United States
Duration: 30 06 201404 07 2014

Publication series

NameProceedings of the International Conference on Ion Implantation Technology

Conference

Conference20th International Conference on Ion Implantation Technology, IIT 2014
Country/TerritoryUnited States
CityPortland
Period30/06/1404/07/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

  • deactivation
  • diffusion
  • interstitial
  • phosphorus
  • silicon-on-insulator

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