Photo-luminescence in InGaN/GaN multiple quantumwells grown on silicon

G. M. Wu, C. F. Hung

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we discuss the photo-luminescence properties of various InGaN/GaN multiple quantum wells grown on silicon substrate using metal-organic chemical vapor deposition. The 20K PL spectra suggest the quantization effect and In-rich phenomenon.

Original languageEnglish
Title of host publicationFrontiers in Optics, FiO 2005
PublisherOptical Society of America (OSA)
ISBN (Print)1557527970, 9781557527974
DOIs
StatePublished - 2005
EventFrontiers in Optics, FiO 2005 - Tucson, AZ, United States
Duration: 16 10 200521 10 2005

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceFrontiers in Optics, FiO 2005
Country/TerritoryUnited States
CityTucson, AZ
Period16/10/0521/10/05

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