Photo-resist protected technology application on solution-based IZOTFT

Chao Nan Chen; Gwo Mei Wu; Kuo Hui Su; How Wen Chien; Jung Jie Huang

doi:10.4156/AISS.vol4.issue20.1

Photo-resist protected technology application on solution-based IZOTFT

Chao Nan Chen, Gwo Mei Wu, Kuo Hui Su, How Wen Chien, Jung Jie Huang^*

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Journal Article › peer-review

Abstract

In this study, solution-based indium-znic-oxide (IZO) thin-film transistors (TFTs) with a photoresist protected structure using halftone technology are demonstrated. A halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The saturation field effect mobility of about 0.18 cm²/Vs, the current ON/OFF ratio is about 10⁶, and the threshold voltage is less than 3.0 V. The solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD fabrication.

Original language	English
Pages (from-to)	1-8
Number of pages	8
Journal	Advances in Information Sciences and Service Sciences
Volume	4
Issue number	20
DOIs	https://doi.org/10.4156/AISS.vol4.issue20.1
State	Published - 11 2012

Keywords

IZO
Photo-resist protected
TFT

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10.4156/AISS.vol4.issue20.1

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title = "Photo-resist protected technology application on solution-based IZOTFT",

abstract = "In this study, solution-based indium-znic-oxide (IZO) thin-film transistors (TFTs) with a photoresist protected structure using halftone technology are demonstrated. A halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The saturation field effect mobility of about 0.18 cm2/Vs, the current ON/OFF ratio is about 106, and the threshold voltage is less than 3.0 V. The solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD fabrication.",

keywords = "IZO, Photo-resist protected, TFT",

author = "Chen, {Chao Nan} and Wu, {Gwo Mei} and Su, {Kuo Hui} and Chien, {How Wen} and Huang, {Jung Jie}",

year = "2012",

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doi = "10.4156/AISS.vol4.issue20.1",

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AU - Chen, Chao Nan

AU - Wu, Gwo Mei

AU - Su, Kuo Hui

AU - Chien, How Wen

AU - Huang, Jung Jie

PY - 2012/11

Y1 - 2012/11

N2 - In this study, solution-based indium-znic-oxide (IZO) thin-film transistors (TFTs) with a photoresist protected structure using halftone technology are demonstrated. A halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The saturation field effect mobility of about 0.18 cm2/Vs, the current ON/OFF ratio is about 106, and the threshold voltage is less than 3.0 V. The solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD fabrication.

AB - In this study, solution-based indium-znic-oxide (IZO) thin-film transistors (TFTs) with a photoresist protected structure using halftone technology are demonstrated. A halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The saturation field effect mobility of about 0.18 cm2/Vs, the current ON/OFF ratio is about 106, and the threshold voltage is less than 3.0 V. The solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD fabrication.

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Photo-resist protected technology application on solution-based IZOTFT

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Keywords

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