@inproceedings{710e737897d7446cb8c72e86ae5749e7,
title = "Photo-resist protected technology application on solution-based IZO-TFT",
abstract = "Solution-based indium-znic-oxide (IZO) thin film transistors (TFTs) with a coplanar homojunction structure using halftone technology are demonstrated. We introduced halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The electrical characteristics of the fabricated devices were examined. The saturation field effect mobility of about 0.18 cm2/Vs, the current ON/OFF ratio is about 106, and the threshold voltage (Vth) is less than 3.0 V. We know that solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD manufacturing.",
keywords = "IZO, Metal-Oxide based, Photo-resist Protected, Solution based, TFT",
author = "Chen, {Chao Nan} and Wu, {Gwo Mei} and Su, {Kuo Hui Su} and Chien, {How Wen}",
year = "2012",
doi = "10.1109/IS3C.2012.235",
language = "英语",
isbn = "9780769546551",
series = "Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012",
pages = "882--885",
booktitle = "Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012",
note = "2012 International Symposium on Computer, Consumer and Control, IS3C 2012 ; Conference date: 04-06-2012 Through 06-06-2012",
}