Photo-resist protected technology application on solution-based IZO-TFT

Chao Nan Chen; Gwo Mei Wu; Kuo Hui Su Su; How Wen Chien

doi:10.1109/IS3C.2012.235

Photo-resist protected technology application on solution-based IZO-TFT

Chao Nan Chen^*
, Gwo Mei Wu
, Kuo Hui Su Su
, How Wen Chien

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Solution-based indium-znic-oxide (IZO) thin film transistors (TFTs) with a coplanar homojunction structure using halftone technology are demonstrated. We introduced halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The electrical characteristics of the fabricated devices were examined. The saturation field effect mobility of about 0.18 cm2/Vs, the current ON/OFF ratio is about 106, and the threshold voltage (Vth) is less than 3.0 V. We know that solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD manufacturing.

Original language	English
Title of host publication	Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012
Pages	882-885
Number of pages	4
DOIs	https://doi.org/10.1109/IS3C.2012.235
State	Published - 2012
Event	2012 International Symposium on Computer, Consumer and Control, IS3C 2012 - Taichung, Taiwan Duration: 04 06 2012 → 06 06 2012

Publication series

Name	Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012

Conference

Conference	2012 International Symposium on Computer, Consumer and Control, IS3C 2012
Country/Territory	Taiwan
City	Taichung
Period	04/06/12 → 06/06/12

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

IZO
Metal-Oxide based
Photo-resist Protected
Solution based
TFT

Access to Document

10.1109/IS3C.2012.235

Cite this

Chen, C. N., Wu, G. M., Su, K. H. S., & Chien, H. W. (2012). Photo-resist protected technology application on solution-based IZO-TFT. In Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012 (pp. 882-885). Article 6228449 (Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012). https://doi.org/10.1109/IS3C.2012.235

@inproceedings{710e737897d7446cb8c72e86ae5749e7,

title = "Photo-resist protected technology application on solution-based IZO-TFT",

abstract = "Solution-based indium-znic-oxide (IZO) thin film transistors (TFTs) with a coplanar homojunction structure using halftone technology are demonstrated. We introduced halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The electrical characteristics of the fabricated devices were examined. The saturation field effect mobility of about 0.18 cm2/Vs, the current ON/OFF ratio is about 106, and the threshold voltage (Vth) is less than 3.0 V. We know that solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD manufacturing.",

keywords = "IZO, Metal-Oxide based, Photo-resist Protected, Solution based, TFT",

author = "Chen, \{Chao Nan\} and Wu, \{Gwo Mei\} and Su, \{Kuo Hui Su\} and Chien, \{How Wen\}",

year = "2012",

doi = "10.1109/IS3C.2012.235",

language = "英语",

isbn = "9780769546551",

series = "Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012",

pages = "882--885",

booktitle = "Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012",

note = "2012 International Symposium on Computer, Consumer and Control, IS3C 2012 ; Conference date: 04-06-2012 Through 06-06-2012",

}

Chen, CN, Wu, GM, Su, KHS & Chien, HW 2012, Photo-resist protected technology application on solution-based IZO-TFT. in Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012., 6228449, Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012, pp. 882-885, 2012 International Symposium on Computer, Consumer and Control, IS3C 2012, Taichung, Taiwan, 04/06/12. https://doi.org/10.1109/IS3C.2012.235

Photo-resist protected technology application on solution-based IZO-TFT. / Chen, Chao Nan; Wu, Gwo Mei; Su, Kuo Hui Su et al.
Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012. 2012. p. 882-885 6228449 (Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Photo-resist protected technology application on solution-based IZO-TFT

AU - Chen, Chao Nan

AU - Wu, Gwo Mei

AU - Su, Kuo Hui Su

AU - Chien, How Wen

PY - 2012

Y1 - 2012

N2 - Solution-based indium-znic-oxide (IZO) thin film transistors (TFTs) with a coplanar homojunction structure using halftone technology are demonstrated. We introduced halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The electrical characteristics of the fabricated devices were examined. The saturation field effect mobility of about 0.18 cm2/Vs, the current ON/OFF ratio is about 106, and the threshold voltage (Vth) is less than 3.0 V. We know that solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD manufacturing.

AB - Solution-based indium-znic-oxide (IZO) thin film transistors (TFTs) with a coplanar homojunction structure using halftone technology are demonstrated. We introduced halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The electrical characteristics of the fabricated devices were examined. The saturation field effect mobility of about 0.18 cm2/Vs, the current ON/OFF ratio is about 106, and the threshold voltage (Vth) is less than 3.0 V. We know that solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD manufacturing.

KW - IZO

KW - Metal-Oxide based

KW - Photo-resist Protected

KW - Solution based

KW - TFT

UR - https://www.scopus.com/pages/publications/84864268956

U2 - 10.1109/IS3C.2012.235

DO - 10.1109/IS3C.2012.235

M3 - 会议稿件

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SN - 9780769546551

T3 - Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012

SP - 882

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BT - Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012

T2 - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012

Y2 - 4 June 2012 through 6 June 2012

ER -

Photo-resist protected technology application on solution-based IZO-TFT

Abstract

Publication series

Conference

UN SDGs

Keywords

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